Three-dimensional stacked MOS transistors by localized silicon epitaxial overgrowth

Three-dimensionally integrated silicon-on-insulator MOS transistors built employing localized silicon epitaxy are discussed. Key parameters for the growth of single-crystal silicon over oxidized polysilicon gates to form channel regions for stacked devices were obtained. The interface between the bu...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-06, Vol.37 (6), p.1452-1461
Hauptverfasser:	Zingg, R.P., Friedrich, J.A., Neudeck, G.W., Hofflinger, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS technology Crystalline materials Design. Technologies. Operation analysis. Testing Electronics Epitaxial growth Exact sciences and technology Insulation Integrated circuits Isolation technology MOS devices MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology Ultra large scale integration Very large scale integration
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