The problems of high-temperature crystallization
Principal conditions of growing refractory single crystal and their real structure are determined by the peculiarities connected with thermal dissociation and dissociative evaporation as well as with the heat and mass transfer processes at high temperatures. Growth of Al sub 2 O sub 3 , inter alia ,...
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| Veröffentlicht in: | Progress in crystal growth and characterization 1988, Vol.16 (1-4), p.59-80 |
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| container_issue | 1-4 |
| container_start_page | 59 |
| container_title | Progress in crystal growth and characterization |
| container_volume | 16 |
| creator | Bagdasarov, Kh.S. |
| description | Principal conditions of growing refractory single crystal and their real structure are determined by the peculiarities connected with thermal dissociation and dissociative evaporation as well as with the heat and mass transfer processes at high temperatures. Growth of Al sub 2 O sub 3 , inter alia , is considered. 25 ref.--AA |
| doi_str_mv | 10.1016/0146-3535(88)90015-9 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0146-3535 |
| ispartof | Progress in crystal growth and characterization, 1988, Vol.16 (1-4), p.59-80 |
| issn | 0146-3535 |
| language | eng |
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| source | Alma/SFX Local Collection |
| title | The problems of high-temperature crystallization |
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