Structure and electrical properties of TiN/GaAs Schottky contacts
The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased i...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-06, Vol.52 (25), p.2160-2162 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | DING, J LILIENTAL-WEBER, Z WEBER, E. R WASHBURN, J FOURKAS, R. M CHEUNG, N. W |
| description | The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets. |
| doi_str_mv | 10.1063/1.99564 |
| format | Article |
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R ; WASHBURN, J ; FOURKAS, R. M ; CHEUNG, N. W</creator><creatorcontrib>DING, J ; LILIENTAL-WEBER, Z ; WEBER, E. R ; WASHBURN, J ; FOURKAS, R. M ; CHEUNG, N. W ; Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720</creatorcontrib><description>The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.99564</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ANNEALING ; Applied sciences ; ARSENIC COMPOUNDS ; ARSENIDES ; CRYSTAL STRUCTURE ; DATA ; DIFFUSION ; ELECTRIC CONTACTS ; ELECTRICAL EQUIPMENT ; ELECTRICAL PROPERTIES ; Electronics ; ELEMENTS ; Exact sciences and technology ; EXPERIMENTAL DATA ; GALLIUM ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; GRAIN BOUNDARIES ; HEAT TREATMENTS ; HIGH TEMPERATURE ; INFORMATION ; INTERFACES ; MATERIALS SCIENCE ; METALS ; MICROSTRUCTURE ; NITRIDES ; NITROGEN COMPOUNDS ; NUMERICAL DATA ; PHYSICAL PROPERTIES ; PNICTIDES ; SCHOTTKY BARRIER DIODES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR DIODES ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; THIN FILMS ; TITANIUM COMPOUNDS ; TITANIUM NITRIDES ; TRANSITION ELEMENT COMPOUNDS 360603 -- Materials-- Properties ; VERY HIGH TEMPERATURE</subject><ispartof>Appl. Phys. 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R</creatorcontrib><creatorcontrib>WASHBURN, J</creatorcontrib><creatorcontrib>FOURKAS, R. M</creatorcontrib><creatorcontrib>CHEUNG, N. W</creatorcontrib><creatorcontrib>Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720</creatorcontrib><title>Structure and electrical properties of TiN/GaAs Schottky contacts</title><title>Appl. Phys. Lett.; (United States)</title><description>The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets.</description><subject>ANNEALING</subject><subject>Applied sciences</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CRYSTAL STRUCTURE</subject><subject>DATA</subject><subject>DIFFUSION</subject><subject>ELECTRIC CONTACTS</subject><subject>ELECTRICAL EQUIPMENT</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronics</subject><subject>ELEMENTS</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>GALLIUM</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>GRAIN BOUNDARIES</subject><subject>HEAT TREATMENTS</subject><subject>HIGH TEMPERATURE</subject><subject>INFORMATION</subject><subject>INTERFACES</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>MICROSTRUCTURE</subject><subject>NITRIDES</subject><subject>NITROGEN COMPOUNDS</subject><subject>NUMERICAL DATA</subject><subject>PHYSICAL PROPERTIES</subject><subject>PNICTIDES</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR DIODES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>THIN FILMS</subject><subject>TITANIUM COMPOUNDS</subject><subject>TITANIUM NITRIDES</subject><subject>TRANSITION ELEMENT COMPOUNDS 360603 -- Materials-- Properties</subject><subject>VERY HIGH TEMPERATURE</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLw0AURgdRsD7wLwTxsUp7bybJZJalaBWKLlrXw-RmQqNpUmcmi_57p7a4dHW5cDgcPsZuEMYIOZ_gWMosT0_YCEGImCMWp2wEADzOZYbn7MK5z_BmCecjNl16O5AfrIl0V0WmNeRtQ7qNtrbfGusb46K-jlbN22Supy5a0rr3_msXUd95Td5dsbNat85cH-8l-3h-Ws1e4sX7_HU2XcTEU_AxpzItgKgiUVVCZIXMZejLSGgALATpPJcGi0QIQKxLA6WWmmMiylKkkvgluz14e-cb5ajxhtYhogvFKktQSkgD9HCAQv33YJxXm8aRaVvdmX5wKskgReQQwMcDSLZ3zppabW2z0XanENR-R4Xqd8dA3h2V2oVdaqs7atwfLhJMMN1j9_9hGFw8D94fZfV8Rw</recordid><startdate>19880620</startdate><enddate>19880620</enddate><creator>DING, J</creator><creator>LILIENTAL-WEBER, Z</creator><creator>WEBER, E. R</creator><creator>WASHBURN, J</creator><creator>FOURKAS, R. M</creator><creator>CHEUNG, N. W</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19880620</creationdate><title>Structure and electrical properties of TiN/GaAs Schottky contacts</title><author>DING, J ; LILIENTAL-WEBER, Z ; WEBER, E. R ; WASHBURN, J ; FOURKAS, R. M ; CHEUNG, N. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-3cb480ccdc7dd77589690775c7a00187ca669e18277011fbe0ba9a3127bb749c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>ANNEALING</topic><topic>Applied sciences</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CRYSTAL STRUCTURE</topic><topic>DATA</topic><topic>DIFFUSION</topic><topic>ELECTRIC CONTACTS</topic><topic>ELECTRICAL EQUIPMENT</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Electronics</topic><topic>ELEMENTS</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>GALLIUM</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>GRAIN BOUNDARIES</topic><topic>HEAT TREATMENTS</topic><topic>HIGH TEMPERATURE</topic><topic>INFORMATION</topic><topic>INTERFACES</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>MICROSTRUCTURE</topic><topic>NITRIDES</topic><topic>NITROGEN COMPOUNDS</topic><topic>NUMERICAL DATA</topic><topic>PHYSICAL PROPERTIES</topic><topic>PNICTIDES</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR DIODES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>THIN FILMS</topic><topic>TITANIUM COMPOUNDS</topic><topic>TITANIUM NITRIDES</topic><topic>TRANSITION ELEMENT COMPOUNDS 360603 -- Materials-- Properties</topic><topic>VERY HIGH TEMPERATURE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DING, J</creatorcontrib><creatorcontrib>LILIENTAL-WEBER, Z</creatorcontrib><creatorcontrib>WEBER, E. R</creatorcontrib><creatorcontrib>WASHBURN, J</creatorcontrib><creatorcontrib>FOURKAS, R. M</creatorcontrib><creatorcontrib>CHEUNG, N. W</creatorcontrib><creatorcontrib>Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DING, J</au><au>LILIENTAL-WEBER, Z</au><au>WEBER, E. R</au><au>WASHBURN, J</au><au>FOURKAS, R. M</au><au>CHEUNG, N. W</au><aucorp>Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structure and electrical properties of TiN/GaAs Schottky contacts</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1988-06-20</date><risdate>1988</risdate><volume>52</volume><issue>25</issue><spage>2160</spage><epage>2162</epage><pages>2160-2162</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The interface structure and morphology of TiN/GaAs contacts before and after annealing at 500, 700, and 850 °C have been investigated by transmission electron microscopy. Results reveal that pocket-like protrusions are formed beneath the interface after annealing at 500 °C. These pockets increased in number and maximum size with increased annealing temperature. Outdiffusion of Ga and/or As along high angle grain boundaries between columnar structure of the as-deposited TiN thin film has been proposed as being responsible for the pocket formation. The changes of electrical characteristics of these materials after annealing have been related to the formation of these pockets.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99564</doi><tpages>3</tpages></addata></record> |
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| ispartof | Appl. Phys. Lett.; (United States), 1988-06, Vol.52 (25), p.2160-2162 |
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| subjects | ANNEALING Applied sciences ARSENIC COMPOUNDS ARSENIDES CRYSTAL STRUCTURE DATA DIFFUSION ELECTRIC CONTACTS ELECTRICAL EQUIPMENT ELECTRICAL PROPERTIES Electronics ELEMENTS Exact sciences and technology EXPERIMENTAL DATA GALLIUM GALLIUM ARSENIDES GALLIUM COMPOUNDS GRAIN BOUNDARIES HEAT TREATMENTS HIGH TEMPERATURE INFORMATION INTERFACES MATERIALS SCIENCE METALS MICROSTRUCTURE NITRIDES NITROGEN COMPOUNDS NUMERICAL DATA PHYSICAL PROPERTIES PNICTIDES SCHOTTKY BARRIER DIODES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices THIN FILMS TITANIUM COMPOUNDS TITANIUM NITRIDES TRANSITION ELEMENT COMPOUNDS 360603 -- Materials-- Properties VERY HIGH TEMPERATURE |
| title | Structure and electrical properties of TiN/GaAs Schottky contacts |
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