The electrical properties of ion-implanted amorphous silicon programmable element in the unprogrammed state

An amorphous silicon layer, confined between metal and single-crystalline silicon, is created by the implantation of ions at high dose into silicon wafers followed by deposition of a metal film. The initial resistance of this structure is very high and drops several orders of magnitude after an exte...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-01, Vol.37 (1), p.159-167
Hauptverfasser:	Shacham-Diamand, Y., Sinar, A., Sirkin, E.R., Blech, I.A., Gerzberg, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloying Amorphous silicon Current measurement Current-voltage characteristics Doping Electric resistance Semiconductor films Semiconductor process modeling Temperature Threshold voltage
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