A surface exafs study of the Vanadium/Si(111) interface
Surface EXAFS spectra recorded above the K-absorption edge of the refractory metal vanadium for submonolayer coverages on the Si(111)7 × 7 surface are presented. Analysis of spectra recorded after depositions at 300 K. gives a VSi bond length of 2.57 ± 0.03 Å. By comparison with possible sites on a...
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| Veröffentlicht in: | Surface science 1988-10, Vol.204 (3), p.428-444 |
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| container_title | Surface science |
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| creator | Morgan, S.J. Law, A.R. Williams, R.H. Norman, D. McGrath, R. McGovern, I.T. |
| description | Surface EXAFS spectra recorded above the K-absorption edge of the refractory metal vanadium for submonolayer coverages on the
Si(111)7 × 7 surface are presented. Analysis of spectra recorded after depositions at 300 K. gives a VSi bond length of 2.57 ± 0.03 Å. By comparison with possible sites on an unreconstructed Si(111) surface the data most favour the six-fold interstitial site between the first and second Si layers. No evidence was found for V cluster formation at submonolayer coverages. The results therefore indicate some degree of reactivity/ intermixing at the room temperature
V
Si
interface, unlike previous reports. SEXAFS spectra recorded for a ∼ 2 monolayer V overlayer following annealing at 825 K for 5 min indicated the formation of the disilicide, VSi
2, as previously reported. |
| doi_str_mv | 10.1016/0039-6028(88)90224-5 |
| format | Article |
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Si(111)7 × 7 surface are presented. Analysis of spectra recorded after depositions at 300 K. gives a VSi bond length of 2.57 ± 0.03 Å. By comparison with possible sites on an unreconstructed Si(111) surface the data most favour the six-fold interstitial site between the first and second Si layers. No evidence was found for V cluster formation at submonolayer coverages. The results therefore indicate some degree of reactivity/ intermixing at the room temperature
V
Si
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Si(111)7 × 7 surface are presented. Analysis of spectra recorded after depositions at 300 K. gives a VSi bond length of 2.57 ± 0.03 Å. By comparison with possible sites on an unreconstructed Si(111) surface the data most favour the six-fold interstitial site between the first and second Si layers. No evidence was found for V cluster formation at submonolayer coverages. The results therefore indicate some degree of reactivity/ intermixing at the room temperature
V
Si
interface, unlike previous reports. SEXAFS spectra recorded for a ∼ 2 monolayer V overlayer following annealing at 825 K for 5 min indicated the formation of the disilicide, VSi
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Si(111)7 × 7 surface are presented. Analysis of spectra recorded after depositions at 300 K. gives a VSi bond length of 2.57 ± 0.03 Å. By comparison with possible sites on an unreconstructed Si(111) surface the data most favour the six-fold interstitial site between the first and second Si layers. No evidence was found for V cluster formation at submonolayer coverages. The results therefore indicate some degree of reactivity/ intermixing at the room temperature
V
Si
interface, unlike previous reports. SEXAFS spectra recorded for a ∼ 2 monolayer V overlayer following annealing at 825 K for 5 min indicated the formation of the disilicide, VSi
2, as previously reported.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/0039-6028(88)90224-5</doi><tpages>17</tpages></addata></record> |
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| ispartof | Surface science, 1988-10, Vol.204 (3), p.428-444 |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Chemistry Exact sciences and technology General and physical chemistry Solid-gas interface Surface physical chemistry |
| title | A surface exafs study of the Vanadium/Si(111) interface |
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