Stability of strained quantum-well field-effect transistor structures

Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing st...

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Veröffentlicht in:	IEEE electron device letters 1988-12, Vol.9 (12), p.621-623
Hauptverfasser:	Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., Hills, C.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Capacitive sensors Circuits Crystallization Degradation Electronics Exact sciences and technology FETs Metastasis Quantum well devices Quantum wells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Transistors
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