Stability of strained quantum-well field-effect transistor structures

Stability of strained quantum-well field-effect transistor structures

Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing st...

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Veröffentlicht in:IEEE electron device letters 1988-12, Vol.9 (12), p.621-623
Hauptverfasser: Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., Hills, C.R.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Capacitive sensors
Circuits
Crystallization
Degradation
Electronics
Exact sciences and technology
FETs
Metastasis
Quantum well devices
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Transistors
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Beschreibung
Zusammenfassung:Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing steps permissible in the integration of these devices to form complex circuits.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.20415