Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology

A new concept in multilevel interconnection, called the reverse pillar process, is introduced. Rather than define interconnections in the metal, the reverse pillar process etches trenches in the dielectric with the reverse tone metal mask. A window contact is also etched in the dielectric and can be...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Vacuum 1988-04, Vol.38 (8-10), p.817-821
Hauptverfasser: Yeh, J L, Hills, G W, Cochran, W T, Rana, V V S, Garcia, A M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 821
container_issue 8-10
container_start_page 817
container_title Vacuum
container_volume 38
creator Yeh, J L
Hills, G W
Cochran, W T
Rana, V V S
Garcia, A M
description A new concept in multilevel interconnection, called the reverse pillar process, is introduced. Rather than define interconnections in the metal, the reverse pillar process etches trenches in the dielectric with the reverse tone metal mask. A window contact is also etched in the dielectric and can be made self-aligned to the trench. The contacts and trenches are simultaneously filled by a blanket metal deposition. The metal is then etched back to leave it recessed in the trench and filling the contact. The approaches all result in a planarized structure upon which additional processing can be undertaken more easily than in conventional schemes. Films of Al or tungsten are mentioned. 12 ref.--AA(UK).
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_25005578</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25005578</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_250055783</originalsourceid><addsrcrecordid>eNqNzc0KgkAUhuFZFGQ_9zCrdgMHy3QbUbQJJF20s0mPOnGcqRkN8uoT6gJaffDwwTtiHsDaFz6ElwmbOncHAH8DkceuZ3yhdchjRSStEJInSKXYkqo0Flzq4gsxSS2t6gc7YSuJVC9bZTRP8hob5KWxPOlujcrtgCnmtTZkqvecjUtJDhe_nbHlYZ_ujuJhzbND12aNcjkOcY2mc5kfAARBGK3-Pn4A8nZHNw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25005578</pqid></control><display><type>article</type><title>Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology</title><source>Access via ScienceDirect (Elsevier)</source><creator>Yeh, J L ; Hills, G W ; Cochran, W T ; Rana, V V S ; Garcia, A M</creator><creatorcontrib>Yeh, J L ; Hills, G W ; Cochran, W T ; Rana, V V S ; Garcia, A M</creatorcontrib><description>A new concept in multilevel interconnection, called the reverse pillar process, is introduced. Rather than define interconnections in the metal, the reverse pillar process etches trenches in the dielectric with the reverse tone metal mask. A window contact is also etched in the dielectric and can be made self-aligned to the trench. The contacts and trenches are simultaneously filled by a blanket metal deposition. The metal is then etched back to leave it recessed in the trench and filling the contact. The approaches all result in a planarized structure upon which additional processing can be undertaken more easily than in conventional schemes. Films of Al or tungsten are mentioned. 12 ref.--AA(UK).</description><identifier>ISSN: 0042-207X</identifier><language>eng</language><ispartof>Vacuum, 1988-04, Vol.38 (8-10), p.817-821</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Yeh, J L</creatorcontrib><creatorcontrib>Hills, G W</creatorcontrib><creatorcontrib>Cochran, W T</creatorcontrib><creatorcontrib>Rana, V V S</creatorcontrib><creatorcontrib>Garcia, A M</creatorcontrib><title>Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology</title><title>Vacuum</title><description>A new concept in multilevel interconnection, called the reverse pillar process, is introduced. Rather than define interconnections in the metal, the reverse pillar process etches trenches in the dielectric with the reverse tone metal mask. A window contact is also etched in the dielectric and can be made self-aligned to the trench. The contacts and trenches are simultaneously filled by a blanket metal deposition. The metal is then etched back to leave it recessed in the trench and filling the contact. The approaches all result in a planarized structure upon which additional processing can be undertaken more easily than in conventional schemes. Films of Al or tungsten are mentioned. 12 ref.--AA(UK).</description><issn>0042-207X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqNzc0KgkAUhuFZFGQ_9zCrdgMHy3QbUbQJJF20s0mPOnGcqRkN8uoT6gJaffDwwTtiHsDaFz6ElwmbOncHAH8DkceuZ3yhdchjRSStEJInSKXYkqo0Flzq4gsxSS2t6gc7YSuJVC9bZTRP8hob5KWxPOlujcrtgCnmtTZkqvecjUtJDhe_nbHlYZ_ujuJhzbND12aNcjkOcY2mc5kfAARBGK3-Pn4A8nZHNw</recordid><startdate>19880411</startdate><enddate>19880411</enddate><creator>Yeh, J L</creator><creator>Hills, G W</creator><creator>Cochran, W T</creator><creator>Rana, V V S</creator><creator>Garcia, A M</creator><scope>7QF</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19880411</creationdate><title>Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology</title><author>Yeh, J L ; Hills, G W ; Cochran, W T ; Rana, V V S ; Garcia, A M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_250055783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeh, J L</creatorcontrib><creatorcontrib>Hills, G W</creatorcontrib><creatorcontrib>Cochran, W T</creatorcontrib><creatorcontrib>Rana, V V S</creatorcontrib><creatorcontrib>Garcia, A M</creatorcontrib><collection>Aluminium Industry Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Vacuum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yeh, J L</au><au>Hills, G W</au><au>Cochran, W T</au><au>Rana, V V S</au><au>Garcia, A M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology</atitle><jtitle>Vacuum</jtitle><date>1988-04-11</date><risdate>1988</risdate><volume>38</volume><issue>8-10</issue><spage>817</spage><epage>821</epage><pages>817-821</pages><issn>0042-207X</issn><abstract>A new concept in multilevel interconnection, called the reverse pillar process, is introduced. Rather than define interconnections in the metal, the reverse pillar process etches trenches in the dielectric with the reverse tone metal mask. A window contact is also etched in the dielectric and can be made self-aligned to the trench. The contacts and trenches are simultaneously filled by a blanket metal deposition. The metal is then etched back to leave it recessed in the trench and filling the contact. The approaches all result in a planarized structure upon which additional processing can be undertaken more easily than in conventional schemes. Films of Al or tungsten are mentioned. 12 ref.--AA(UK).</abstract></addata></record>
fulltext fulltext
identifier ISSN: 0042-207X
ispartof Vacuum, 1988-04, Vol.38 (8-10), p.817-821
issn 0042-207X
language eng
recordid cdi_proquest_miscellaneous_25005578
source Access via ScienceDirect (Elsevier)
title Reverse Pillar--a Self-Aligned and Self-Planarized Metallization Scheme for Submicron Technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T14%3A32%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reverse%20Pillar--a%20Self-Aligned%20and%20Self-Planarized%20Metallization%20Scheme%20for%20Submicron%20Technology&rft.jtitle=Vacuum&rft.au=Yeh,%20J%20L&rft.date=1988-04-11&rft.volume=38&rft.issue=8-10&rft.spage=817&rft.epage=821&rft.pages=817-821&rft.issn=0042-207X&rft_id=info:doi/&rft_dat=%3Cproquest%3E25005578%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25005578&rft_id=info:pmid/&rfr_iscdi=true