Passivation of GaAs FET's with PECVD silicon nitride films of different stress states

The passivation of GaAs MESFETs with plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride films of both compressive and tensile stress is reported. Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET...

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Veröffentlicht in:	IEEE transactions on electron devices 1988-09, Vol.35 (9), p.1412-1418
Hauptverfasser:	Chang, E.Y., Cibuzar, G.T., Pande, K.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology FETs Gallium arsenide Integrated circuits MESFETs Passivation Piezoelectric films Plasma chemistry Plasma properties Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon Tensile stress
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