Passivation of GaAs FET's with PECVD silicon nitride films of different stress states
The passivation of GaAs MESFETs with plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride films of both compressive and tensile stress is reported. Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET...
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| Veröffentlicht in: | IEEE transactions on electron devices 1988-09, Vol.35 (9), p.1412-1418 |
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| container_issue | 9 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 35 |
| creator | Chang, E.Y. Cibuzar, G.T. Pande, K.P. |
| description | The passivation of GaAs MESFETs with plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride films of both compressive and tensile stress is reported. Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET characteristics. The shift of MESFET parameters due to passivation was found to be dependent on gate orientation. The experiments show that nitride of tensile stress is preferable for MESFETS with (011-bar) oriented gates. The shifts in V/sub TH/,I/sub DSS/, and G/sub M/ of the devices before and after nitride passivation are less than 5% if the nitride of appropriate stress states are used for passivation. The breakdown voltage of the MESFETs after nitride deposition was also studied. It is found that the process with higher hydrogen incorporation tends to reduce the surface oxide and increase the breakdown voltage after nitride deposition. In addition, the passivation of double-channel HEMTs is reported for the first time.< > |
| doi_str_mv | 10.1109/16.2573 |
| format | Article |
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Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET characteristics. The shift of MESFET parameters due to passivation was found to be dependent on gate orientation. The experiments show that nitride of tensile stress is preferable for MESFETS with (011-bar) oriented gates. The shifts in V/sub TH/,I/sub DSS/, and G/sub M/ of the devices before and after nitride passivation are less than 5% if the nitride of appropriate stress states are used for passivation. The breakdown voltage of the MESFETs after nitride deposition was also studied. It is found that the process with higher hydrogen incorporation tends to reduce the surface oxide and increase the breakdown voltage after nitride deposition. In addition, the passivation of double-channel HEMTs is reported for the first time.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.2573</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; FETs ; Gallium arsenide ; Integrated circuits ; MESFETs ; Passivation ; Piezoelectric films ; Plasma chemistry ; Plasma properties ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET characteristics. The shift of MESFET parameters due to passivation was found to be dependent on gate orientation. The experiments show that nitride of tensile stress is preferable for MESFETS with (011-bar) oriented gates. The shifts in V/sub TH/,I/sub DSS/, and G/sub M/ of the devices before and after nitride passivation are less than 5% if the nitride of appropriate stress states are used for passivation. The breakdown voltage of the MESFETs after nitride deposition was also studied. It is found that the process with higher hydrogen incorporation tends to reduce the surface oxide and increase the breakdown voltage after nitride deposition. In addition, the passivation of double-channel HEMTs is reported for the first time.< ></description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Integrated circuits</subject><subject>MESFETs</subject><subject>Passivation</subject><subject>Piezoelectric films</subject><subject>Plasma chemistry</subject><subject>Plasma properties</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>Silicon</subject><subject>Tensile stress</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo90D1PwzAQBmALgUQpiJXRA6JTih1_JSMqpSBVogNljZzkLIzSpPgMiH-PS1Gnu9M9eoeXkEvOppyz8pbraa6MOCIjrpTJSi31MRkxxousFIU4JWeI7-nUUuYjsl5ZRP9lox96Oji6sHdIH-YvE6TfPr7R1Xz2ek_Rd75JoPcx-Bao890Gd7z1zkGAPlKMARDTsBHwnJw42yFc_M8xWafM2WO2fF48ze6WWSMYi5ljhTZty1umtSq4ZK12tq6NbJWzutZ1UefAdSGFzplynCkFuSmgVCJtoMWY3Oxzt2H4-ASM1cZjA11nexg-scplaYxgZYKTPWzCgBjAVdvgNzb8VJxVu9oqrqtdbUle_0dabGzngu0bjwduuC6lyBO72jMPAIfvX8IvfmNyRA</recordid><startdate>19880901</startdate><enddate>19880901</enddate><creator>Chang, E.Y.</creator><creator>Cibuzar, G.T.</creator><creator>Pande, K.P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19880901</creationdate><title>Passivation of GaAs FET's with PECVD silicon nitride films of different stress states</title><author>Chang, E.Y. ; Cibuzar, G.T. ; Pande, K.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c300t-f0867dd1d06658140d6fabb74d5fa6b6b8b2e168436205f1055e278e95355ee63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Gallium arsenide</topic><topic>Integrated circuits</topic><topic>MESFETs</topic><topic>Passivation</topic><topic>Piezoelectric films</topic><topic>Plasma chemistry</topic><topic>Plasma properties</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor films</topic><topic>Silicon</topic><topic>Tensile stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, E.Y.</creatorcontrib><creatorcontrib>Cibuzar, G.T.</creatorcontrib><creatorcontrib>Pande, K.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, E.Y.</au><au>Cibuzar, G.T.</au><au>Pande, K.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Passivation of GaAs FET's with PECVD silicon nitride films of different stress states</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1988-09-01</date><risdate>1988</risdate><volume>35</volume><issue>9</issue><spage>1412</spage><epage>1418</epage><pages>1412-1418</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The passivation of GaAs MESFETs with plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride films of both compressive and tensile stress is reported. Elastic stresses included in GaAs following nitride passivation can produce piezoelectric charge density, which results in a shift of MESFET characteristics. The shift of MESFET parameters due to passivation was found to be dependent on gate orientation. The experiments show that nitride of tensile stress is preferable for MESFETS with (011-bar) oriented gates. The shifts in V/sub TH/,I/sub DSS/, and G/sub M/ of the devices before and after nitride passivation are less than 5% if the nitride of appropriate stress states are used for passivation. The breakdown voltage of the MESFETs after nitride deposition was also studied. It is found that the process with higher hydrogen incorporation tends to reduce the surface oxide and increase the breakdown voltage after nitride deposition. In addition, the passivation of double-channel HEMTs is reported for the first time.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.2573</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1988-09, Vol.35 (9), p.1412-1418 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24977309 |
| source | IEEE Xplore |
| subjects | Applied sciences Electronics Exact sciences and technology FETs Gallium arsenide Integrated circuits MESFETs Passivation Piezoelectric films Plasma chemistry Plasma properties Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Silicon Tensile stress |
| title | Passivation of GaAs FET's with PECVD silicon nitride films of different stress states |
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