Si-Ge-metal ternary phase diagram calculations
Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solve...
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Veröffentlicht in: | Journal of the Electrochemical Society 1990-09, Vol.137 (9), p.2928-2937 |
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creator | Fleurial, J. P. Borshchevsky, A. |
description | Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process). |
doi_str_mv | 10.1149/1.2087101 |
format | Article |
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P. ; Borshchevsky, A.</creator><creatorcontrib>Fleurial, J. P. ; Borshchevsky, A.</creatorcontrib><description>Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. 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P.</creatorcontrib><creatorcontrib>Borshchevsky, A.</creatorcontrib><title>Si-Ge-metal ternary phase diagram calculations</title><title>Journal of the Electrochemical Society</title><description>Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>General studies of phase transitions</subject><subject>Nonmetallic Materials</subject><subject>Physics</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><sourceid>CYI</sourceid><recordid>eNpFkEFLAzEQhYMoWKsH7x72ouBh60yS3SRHKVqFggf1HKbpRFe2uzXZHvz3rrTg6TG8bx68J8QlwgxRuzucSbAGAY_EBJ2uSoOIx2ICgKrUdYWn4iznr_FEq81EzF6bcsHlhgdqi4FTR-mn2H5S5mLd0EeiTRGoDbuWhqbv8rk4idRmvjjoVLw_PrzNn8rly-J5fr8sgwI3lIHQMhmOUXE0UqO0HEFHi-zY1uR45RTZgGtjUNestFpJigjOuipKp6biZp-7Tf33jvPgN00O3LbUcb_LXmpnlLQwgrd7MKQ-58TRb1OzGUt4BP-3iEd_WGRkrw-hlMdSMVEXmvz_4Cqoa6NG7mrPdZTJd0PKo-cAoMZKgvoF4UtmoQ</recordid><startdate>19900901</startdate><enddate>19900901</enddate><creator>Fleurial, J. 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P.</creatorcontrib><creatorcontrib>Borshchevsky, A.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fleurial, J. P.</au><au>Borshchevsky, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Si-Ge-metal ternary phase diagram calculations</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1990-09-01</date><risdate>1990</risdate><volume>137</volume><issue>9</issue><spage>2928</spage><epage>2937</epage><pages>2928-2937</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).</abstract><cop>Legacy CDMS</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2087101</doi><tpages>10</tpages></addata></record> |
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source | IOP Publishing Journals; NASA Technical Reports Server |
subjects | Condensed matter: structure, mechanical and thermal properties Equations of state, phase equilibria, and phase transitions Exact sciences and technology General studies of phase transitions Nonmetallic Materials Physics |
title | Si-Ge-metal ternary phase diagram calculations |
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