Platinum wire wedge bonding: a new IC and microsensor interconnect

We describe a new means of making electrical connections between die and chip header. Interconnects are made by using a conventional wire bonder to ultrasonically wedge bond 0.032 mm diameter Pt wires to both Pt and Al thin films. Interconnects made in this manner are remarkably strong. Electrical m...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 1988-07, Vol.17 (4), p.285-289
Hauptverfasser: MANTESE, J. V, ALCINI, W. V
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 289
container_issue 4
container_start_page 285
container_title Journal of electronic materials
container_volume 17
creator MANTESE, J. V
ALCINI, W. V
description We describe a new means of making electrical connections between die and chip header. Interconnects are made by using a conventional wire bonder to ultrasonically wedge bond 0.032 mm diameter Pt wires to both Pt and Al thin films. Interconnects made in this manner are remarkably strong. Electrical measurements show contact resistances of less than or equal to 0.05 Omega . Annealing tests show that bonds made to thin metal films of Pt on Ti on sapphire show no appreciable signs of electrical or mechanical degradation after anneals at 900 degree C for 1 h in pure oxygen.
doi_str_mv 10.1007/BF02652107
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24961952</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24952844</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-7e3137aefb501fcfed034cce2dd55c3091013a58aff1f8c48272fc368d035db43</originalsourceid><addsrcrecordid>eNqNkEFLwzAYhoMoOKcXf0EO4kGo5kuaNvXmhtPBQA8K3kqWfBmRNp1JR_Hfu7GhV0_v5XkfeF9CLoHdAmPl3WTGeCE5sPKIjEDmIgNVfByTERMFZJILeUrOUvpkDCQoGJHJa6N7HzYtHXxEOqBdIV12wfqwuqeaBhzofEp1sLT1JnYJQ-oi9aHHaLoQ0PTn5MTpJuHFIcfkffb4Nn3OFi9P8-nDIjOC8z4rUYAoNbqlZOCMQ8tEbgxya6U0glXAQGiptHPglMkVL7kzolBbTtplLsbkeu9dx-5rg6mvW58MNo0O2G1SzfOqgGq78R-g5CrfGW_24G5YiujqdfStjt81sHr3Z_335xa-Olh1MrpxUQfj02-jFEUFSokfREpzmQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24952844</pqid></control><display><type>article</type><title>Platinum wire wedge bonding: a new IC and microsensor interconnect</title><source>SpringerLink Journals - AutoHoldings</source><creator>MANTESE, J. V ; ALCINI, W. V</creator><creatorcontrib>MANTESE, J. V ; ALCINI, W. V</creatorcontrib><description>We describe a new means of making electrical connections between die and chip header. Interconnects are made by using a conventional wire bonder to ultrasonically wedge bond 0.032 mm diameter Pt wires to both Pt and Al thin films. Interconnects made in this manner are remarkably strong. Electrical measurements show contact resistances of less than or equal to 0.05 Omega . Annealing tests show that bonds made to thin metal films of Pt on Ti on sapphire show no appreciable signs of electrical or mechanical degradation after anneals at 900 degree C for 1 h in pure oxygen.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/BF02652107</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of electronic materials, 1988-07, Vol.17 (4), p.285-289</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-7e3137aefb501fcfed034cce2dd55c3091013a58aff1f8c48272fc368d035db43</citedby><cites>FETCH-LOGICAL-c322t-7e3137aefb501fcfed034cce2dd55c3091013a58aff1f8c48272fc368d035db43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7369188$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MANTESE, J. V</creatorcontrib><creatorcontrib>ALCINI, W. V</creatorcontrib><title>Platinum wire wedge bonding: a new IC and microsensor interconnect</title><title>Journal of electronic materials</title><description>We describe a new means of making electrical connections between die and chip header. Interconnects are made by using a conventional wire bonder to ultrasonically wedge bond 0.032 mm diameter Pt wires to both Pt and Al thin films. Interconnects made in this manner are remarkably strong. Electrical measurements show contact resistances of less than or equal to 0.05 Omega . Annealing tests show that bonds made to thin metal films of Pt on Ti on sapphire show no appreciable signs of electrical or mechanical degradation after anneals at 900 degree C for 1 h in pure oxygen.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqNkEFLwzAYhoMoOKcXf0EO4kGo5kuaNvXmhtPBQA8K3kqWfBmRNp1JR_Hfu7GhV0_v5XkfeF9CLoHdAmPl3WTGeCE5sPKIjEDmIgNVfByTERMFZJILeUrOUvpkDCQoGJHJa6N7HzYtHXxEOqBdIV12wfqwuqeaBhzofEp1sLT1JnYJQ-oi9aHHaLoQ0PTn5MTpJuHFIcfkffb4Nn3OFi9P8-nDIjOC8z4rUYAoNbqlZOCMQ8tEbgxya6U0glXAQGiptHPglMkVL7kzolBbTtplLsbkeu9dx-5rg6mvW58MNo0O2G1SzfOqgGq78R-g5CrfGW_24G5YiujqdfStjt81sHr3Z_335xa-Olh1MrpxUQfj02-jFEUFSokfREpzmQ</recordid><startdate>19880701</startdate><enddate>19880701</enddate><creator>MANTESE, J. V</creator><creator>ALCINI, W. V</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19880701</creationdate><title>Platinum wire wedge bonding: a new IC and microsensor interconnect</title><author>MANTESE, J. V ; ALCINI, W. V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-7e3137aefb501fcfed034cce2dd55c3091013a58aff1f8c48272fc368d035db43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MANTESE, J. V</creatorcontrib><creatorcontrib>ALCINI, W. V</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MANTESE, J. V</au><au>ALCINI, W. V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Platinum wire wedge bonding: a new IC and microsensor interconnect</atitle><jtitle>Journal of electronic materials</jtitle><date>1988-07-01</date><risdate>1988</risdate><volume>17</volume><issue>4</issue><spage>285</spage><epage>289</epage><pages>285-289</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>We describe a new means of making electrical connections between die and chip header. Interconnects are made by using a conventional wire bonder to ultrasonically wedge bond 0.032 mm diameter Pt wires to both Pt and Al thin films. Interconnects made in this manner are remarkably strong. Electrical measurements show contact resistances of less than or equal to 0.05 Omega . Annealing tests show that bonds made to thin metal films of Pt on Ti on sapphire show no appreciable signs of electrical or mechanical degradation after anneals at 900 degree C for 1 h in pure oxygen.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02652107</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0361-5235
ispartof Journal of electronic materials, 1988-07, Vol.17 (4), p.285-289
issn 0361-5235
1543-186X
language eng
recordid cdi_proquest_miscellaneous_24961952
source SpringerLink Journals - AutoHoldings
subjects Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Platinum wire wedge bonding: a new IC and microsensor interconnect
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T02%3A27%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Platinum%20wire%20wedge%20bonding:%20a%20new%20IC%20and%20microsensor%20interconnect&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=MANTESE,%20J.%20V&rft.date=1988-07-01&rft.volume=17&rft.issue=4&rft.spage=285&rft.epage=289&rft.pages=285-289&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/BF02652107&rft_dat=%3Cproquest_cross%3E24952844%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24952844&rft_id=info:pmid/&rfr_iscdi=true