High electron mobility in modulation-doped Si/SiGe

Ultrahigh-vacuum chemical vapor deposition has been exploited to grow single-heterojunction n-type modulation-doped Si/SiGe structures. Phosphorus dopant is imbedded in the SiGe layer at two distinct positions: one at the surface to prevent depletion by surface states, and the other separated from t...

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Veröffentlicht in:	Applied physics letters 1991-05, Vol.58 (19), p.2117-2119
Hauptverfasser:	ISMAIL, K, MEYERSON, B. S, WANG, P. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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