A novel method to extract contact resistivity for thermoelectric semiconductor
Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A commercial instrument in thermoelectricity is demonstrated for the first time to extract the contact resistivity of thermoelectric legs by use of the three options of the probe distance. The specimen compr...
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| Veröffentlicht in: | Review of scientific instruments 2021-02, Vol.92 (2), p.025110-025110 |
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| container_title | Review of scientific instruments |
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| creator | Hu, Xiaokai Liu, Xixi Guo, Zuteng Zhu, Liming |
| description | Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A commercial instrument in thermoelectricity is demonstrated for the first time to extract the contact resistivity of thermoelectric legs by use of the three options of the probe distance. The specimen comprises two legs of bismuth telluride that are connected with reflow soldering. The probe distances are calibrated with a homogeneous sample of constantan. The linear fittings between the electrical resistance and the probe gap are employed in the calibration and in deriving the contact resistivity. The contact resistivity of n-type Bi2Te3 and p-type Bi2Te3 with nickel plating to the Sn64Bi35Ag1 solder is determined to be 17.4 µΩ cm2 and 9.8 µΩ cm2 at ambient temperature, respectively. The contact resistivities at two other temperatures are extracted as well so that the contact resistivity as a function of temperature would be available from the proposed method. |
| doi_str_mv | 10.1063/5.0035223 |
| format | Article |
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A commercial instrument in thermoelectricity is demonstrated for the first time to extract the contact resistivity of thermoelectric legs by use of the three options of the probe distance. The specimen comprises two legs of bismuth telluride that are connected with reflow soldering. The probe distances are calibrated with a homogeneous sample of constantan. The linear fittings between the electrical resistance and the probe gap are employed in the calibration and in deriving the contact resistivity. The contact resistivity of n-type Bi2Te3 and p-type Bi2Te3 with nickel plating to the Sn64Bi35Ag1 solder is determined to be 17.4 µΩ cm2 and 9.8 µΩ cm2 at ambient temperature, respectively. The contact resistivities at two other temperatures are extracted as well so that the contact resistivity as a function of temperature would be available from the proposed method.</description><identifier>ISSN: 0034-6748</identifier><identifier>EISSN: 1089-7623</identifier><identifier>DOI: 10.1063/5.0035223</identifier><identifier>PMID: 33648143</identifier><identifier>CODEN: RSINAK</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>Ambient temperature ; Bismuth tellurides ; Constantan ; Electric contacts ; Electrical resistance ; Electrical resistivity ; Nickel plating ; Reflow soldering ; Scientific apparatus & instruments ; Thermoelectricity</subject><ispartof>Review of scientific instruments, 2021-02, Vol.92 (2), p.025110-025110</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-c43282eb09cbd472ec182988cfd8cfa77f664d60ba8e850899fc12760a12588a3</citedby><cites>FETCH-LOGICAL-c383t-c43282eb09cbd472ec182988cfd8cfa77f664d60ba8e850899fc12760a12588a3</cites><orcidid>0000-0001-7048-6614 ; 0000000170486614</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/rsi/article-lookup/doi/10.1063/5.0035223$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/33648143$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hu, Xiaokai</creatorcontrib><creatorcontrib>Liu, Xixi</creatorcontrib><creatorcontrib>Guo, Zuteng</creatorcontrib><creatorcontrib>Zhu, Liming</creatorcontrib><title>A novel method to extract contact resistivity for thermoelectric semiconductor</title><title>Review of scientific instruments</title><addtitle>Rev Sci Instrum</addtitle><description>Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A commercial instrument in thermoelectricity is demonstrated for the first time to extract the contact resistivity of thermoelectric legs by use of the three options of the probe distance. The specimen comprises two legs of bismuth telluride that are connected with reflow soldering. The probe distances are calibrated with a homogeneous sample of constantan. The linear fittings between the electrical resistance and the probe gap are employed in the calibration and in deriving the contact resistivity. The contact resistivity of n-type Bi2Te3 and p-type Bi2Te3 with nickel plating to the Sn64Bi35Ag1 solder is determined to be 17.4 µΩ cm2 and 9.8 µΩ cm2 at ambient temperature, respectively. The contact resistivities at two other temperatures are extracted as well so that the contact resistivity as a function of temperature would be available from the proposed method.</description><subject>Ambient temperature</subject><subject>Bismuth tellurides</subject><subject>Constantan</subject><subject>Electric contacts</subject><subject>Electrical resistance</subject><subject>Electrical resistivity</subject><subject>Nickel plating</subject><subject>Reflow soldering</subject><subject>Scientific apparatus & instruments</subject><subject>Thermoelectricity</subject><issn>0034-6748</issn><issn>1089-7623</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90F1LwzAUBuAgipvTC_-AFLxRoTNfbdLLMfyCoTd6XbL0lGW0zUzS4f69GZsKggbCgfDwkvMidE7wmOCc3WZjjFlGKTtAQ4JlkYqcskM0jK88zQWXA3Ti_RLHkxFyjAaM5VwSzoboeZJ0dg1N0kJY2CoJNoGP4JQOibZd2E4H3vhg1iZsktq6JCzAtRYa0MEZnXhoTaRVr4N1p-ioVo2Hs_0cobf7u9fpYzp7eXiaTmapZpKFVHNGJYU5LvS84oKCJpIWUuq6ilcJUec5r3I8VxJkFjcqak2oyLEiNJNSsRG62uWunH3vwYeyNV5D06gObO9LyouMb7elkV7-okvbuy7-LiopRVYIJqK63intrPcO6nLlTKvcpiS43JZcZuW-5Ggv9on9vIXqW361GsHNDnhtggrGdv-m_YnX1v3AclXV7BMp7ZIy</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Hu, Xiaokai</creator><creator>Liu, Xixi</creator><creator>Guo, Zuteng</creator><creator>Zhu, Liming</creator><general>American Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-7048-6614</orcidid><orcidid>https://orcid.org/0000000170486614</orcidid></search><sort><creationdate>20210201</creationdate><title>A novel method to extract contact resistivity for thermoelectric semiconductor</title><author>Hu, Xiaokai ; Liu, Xixi ; Guo, Zuteng ; Zhu, Liming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-c43282eb09cbd472ec182988cfd8cfa77f664d60ba8e850899fc12760a12588a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Ambient temperature</topic><topic>Bismuth tellurides</topic><topic>Constantan</topic><topic>Electric contacts</topic><topic>Electrical resistance</topic><topic>Electrical resistivity</topic><topic>Nickel plating</topic><topic>Reflow soldering</topic><topic>Scientific apparatus & instruments</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Xiaokai</creatorcontrib><creatorcontrib>Liu, Xixi</creatorcontrib><creatorcontrib>Guo, Zuteng</creatorcontrib><creatorcontrib>Zhu, Liming</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Review of scientific instruments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Xiaokai</au><au>Liu, Xixi</au><au>Guo, Zuteng</au><au>Zhu, Liming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel method to extract contact resistivity for thermoelectric semiconductor</atitle><jtitle>Review of scientific instruments</jtitle><addtitle>Rev Sci Instrum</addtitle><date>2021-02-01</date><risdate>2021</risdate><volume>92</volume><issue>2</issue><spage>025110</spage><epage>025110</epage><pages>025110-025110</pages><issn>0034-6748</issn><eissn>1089-7623</eissn><coden>RSINAK</coden><abstract>Contact electrical resistance is a critical issue to be addressed in thermoelectric modules. A commercial instrument in thermoelectricity is demonstrated for the first time to extract the contact resistivity of thermoelectric legs by use of the three options of the probe distance. The specimen comprises two legs of bismuth telluride that are connected with reflow soldering. The probe distances are calibrated with a homogeneous sample of constantan. The linear fittings between the electrical resistance and the probe gap are employed in the calibration and in deriving the contact resistivity. The contact resistivity of n-type Bi2Te3 and p-type Bi2Te3 with nickel plating to the Sn64Bi35Ag1 solder is determined to be 17.4 µΩ cm2 and 9.8 µΩ cm2 at ambient temperature, respectively. The contact resistivities at two other temperatures are extracted as well so that the contact resistivity as a function of temperature would be available from the proposed method.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><pmid>33648143</pmid><doi>10.1063/5.0035223</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-7048-6614</orcidid><orcidid>https://orcid.org/0000000170486614</orcidid></addata></record> |
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| ispartof | Review of scientific instruments, 2021-02, Vol.92 (2), p.025110-025110 |
| issn | 0034-6748 1089-7623 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Ambient temperature Bismuth tellurides Constantan Electric contacts Electrical resistance Electrical resistivity Nickel plating Reflow soldering Scientific apparatus & instruments Thermoelectricity |
| title | A novel method to extract contact resistivity for thermoelectric semiconductor |
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