Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m
The strength, formation, and decay of photorefractive and free-carrier gratings written in GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated using picosecond-time-resolved two-beam coupling, transient grating, and degenerate-four-wave-mixing techniques. Photorefractive weak-beam gains...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1988-02, Vol.24 (2), p.289-303 |
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| container_end_page | 303 |
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| container_issue | 2 |
| container_start_page | 289 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 24 |
| creator | Smirl, A.L. Valley, G.C. Bohnert, K.M. Boggess, T.F. |
| description | The strength, formation, and decay of photorefractive and free-carrier gratings written in GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated using picosecond-time-resolved two-beam coupling, transient grating, and degenerate-four-wave-mixing techniques. Photorefractive weak-beam gains of a few percent are measured at fluences of a few pJ/ mu m/sup 2/ (0.1 mJ/cm/sup 2/), and gain from transient energy transfer is observed at fluences larger than approximately 10 mJ/cm/sup 2/ in the beam-coupling experiments. The roles of saturation and two-photon absorption in determining the final electron, hole, and ionized-donor populations and the roles of drift and diffusion in determining the quasi-steady-state photorefractive and free-carrier index modulations are discussed.< > |
| doi_str_mv | 10.1109/3.125 |
| format | Article |
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Photorefractive weak-beam gains of a few percent are measured at fluences of a few pJ/ mu m/sup 2/ (0.1 mJ/cm/sup 2/), and gain from transient energy transfer is observed at fluences larger than approximately 10 mJ/cm/sup 2/ in the beam-coupling experiments. 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Photorefractive weak-beam gains of a few percent are measured at fluences of a few pJ/ mu m/sup 2/ (0.1 mJ/cm/sup 2/), and gain from transient energy transfer is observed at fluences larger than approximately 10 mJ/cm/sup 2/ in the beam-coupling experiments. The roles of saturation and two-photon absorption in determining the final electron, hole, and ionized-donor populations and the roles of drift and diffusion in determining the quasi-steady-state photorefractive and free-carrier index modulations are discussed.< ></description><subject>Absorption</subject><subject>Charge carrier processes</subject><subject>Energy exchange</subject><subject>Energy measurement</subject><subject>Gain measurement</subject><subject>Gallium arsenide</subject><subject>Gratings</subject><subject>Photorefractive effect</subject><subject>Photorefractive materials</subject><subject>Wavelength measurement</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEURYMoWGvXbrPR3dS8TDLJLEvRKhR0obgcYvJGI50Pk1TovzcygltXj3vv4S0OIQtgSwBWX5dL4PKIzEBKXYCC8pjMGANd1FCrU3IW40eOQmg2Iy-P3g4R7dA7Or4PaQjYBmOT_0JqctcGxMKaEDwGmoLpo8c-UewxvB2mos2L7-nGrCI1iQLt9rQ7Jyet2UVc_N45eb69eVrfFduHzf16tS0sr2UqnDFSoXUO3auTUIIWSoHTWFmUTKqqFcZyVZlSaNEq4JVugTOhNAPpkJVzcjX9HcPwuceYms5Hi7ud6XHYx4aLWoga_gdyycsMXk6gDUOMWUczBt-ZcGiANT9-m7LJfjN3MXEeEf-YvHwDIjZztg</recordid><startdate>19880201</startdate><enddate>19880201</enddate><creator>Smirl, A.L.</creator><creator>Valley, G.C.</creator><creator>Bohnert, K.M.</creator><creator>Boggess, T.F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7SP</scope><scope>7U5</scope><scope>L7M</scope></search><sort><creationdate>19880201</creationdate><title>Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m</title><author>Smirl, A.L. ; Valley, G.C. ; Bohnert, K.M. ; Boggess, T.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-daa57ecddedbd513184771d8e6ce50576f4ac276a3484f71268f120478015de03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Absorption</topic><topic>Charge carrier processes</topic><topic>Energy exchange</topic><topic>Energy measurement</topic><topic>Gain measurement</topic><topic>Gallium arsenide</topic><topic>Gratings</topic><topic>Photorefractive effect</topic><topic>Photorefractive materials</topic><topic>Wavelength measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smirl, A.L.</creatorcontrib><creatorcontrib>Valley, G.C.</creatorcontrib><creatorcontrib>Bohnert, K.M.</creatorcontrib><creatorcontrib>Boggess, T.F.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Smirl, A.L.</au><au>Valley, G.C.</au><au>Bohnert, K.M.</au><au>Boggess, T.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1988-02-01</date><risdate>1988</risdate><volume>24</volume><issue>2</issue><spage>289</spage><epage>303</epage><pages>289-303</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The strength, formation, and decay of photorefractive and free-carrier gratings written in GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated using picosecond-time-resolved two-beam coupling, transient grating, and degenerate-four-wave-mixing techniques. Photorefractive weak-beam gains of a few percent are measured at fluences of a few pJ/ mu m/sup 2/ (0.1 mJ/cm/sup 2/), and gain from transient energy transfer is observed at fluences larger than approximately 10 mJ/cm/sup 2/ in the beam-coupling experiments. The roles of saturation and two-photon absorption in determining the final electron, hole, and ionized-donor populations and the roles of drift and diffusion in determining the quasi-steady-state photorefractive and free-carrier index modulations are discussed.< ></abstract><pub>IEEE</pub><doi>10.1109/3.125</doi><tpages>15</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 1988-02, Vol.24 (2), p.289-303 |
| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Charge carrier processes Energy exchange Energy measurement Gain measurement Gallium arsenide Gratings Photorefractive effect Photorefractive materials Wavelength measurement |
| title | Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m |
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