Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications
Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also ta...
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| Veröffentlicht in: | Journal of applied physics 1988-05, Vol.63 (10), p.5131-5142 |
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| container_end_page | 5142 |
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| container_issue | 10 |
| container_start_page | 5131 |
| container_title | Journal of applied physics |
| container_volume | 63 |
| creator | Benumof, Reuben Zoutendyk, John Coss, James |
| description | Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed. |
| doi_str_mv | 10.1063/1.340415 |
| format | Article |
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The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Electronics And Electrical Engineering</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Benumof, Reuben</creatorcontrib><creatorcontrib>Zoutendyk, John</creatorcontrib><creatorcontrib>Coss, James</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benumof, Reuben</au><au>Zoutendyk, John</au><au>Coss, James</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications</atitle><jtitle>Journal of applied physics</jtitle><date>1988-05-15</date><risdate>1988</risdate><volume>63</volume><issue>10</issue><spage>5131</spage><epage>5142</epage><pages>5131-5142</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.</abstract><cop>Legacy CDMS</cop><pub>American Institute of Physics</pub><doi>10.1063/1.340415</doi><tpages>12</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1988-05, Vol.63 (10), p.5131-5142 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24937147 |
| source | AIP Digital Archive; NASA Technical Reports Server |
| subjects | Applied sciences Electronics Electronics And Electrical Engineering Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications |
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