Microtomography observation of precipitates in semi-insulating GaAs materials

Defects introduced in GaAs materials during growth and post-growth thermal processes are known to largely influence the specifications of transistors. Various techniques have been improved to detect these defects and obtain images of their organization. Laser scanning tomography provides us with mac...

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Veröffentlicht in:	Journal of applied physics 1988-11, Vol.64 (10), p.5161-5169
Hauptverfasser:	GALL, P, FILLARD, J. P, CASTAGNE, M, WEYHER, J. L, BONNAFE, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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