Growth and transport properties of InAs epilayers on GaAs

A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films...

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Veröffentlicht in:	Applied physics letters 1988-10, Vol.53 (17), p.1647-1649
Hauptverfasser:	KALEM, S, CHYI, J.-I, MORKOC, H, BEAN, R, ZANIO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
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