Growth and transport properties of InAs epilayers on GaAs
A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films...
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| Veröffentlicht in: | Applied physics letters 1988-10, Vol.53 (17), p.1647-1649 |
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| container_title | Applied physics letters |
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| creator | KALEM, S CHYI, J.-I MORKOC, H BEAN, R ZANIO, K |
| description | A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm−3) and peaks at about liquid-nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm−3) for a 6.2-μm-thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity-phonon-dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm−2 are found. |
| doi_str_mv | 10.1063/1.99938 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24892507</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24892507</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-8c7a77f3863fbaed680928984b6785324019328bcc0db9669271b94daeac9363</originalsourceid><addsrcrecordid>eNo9kFFLwzAUhYMoOKf4F_og-tSZ5LZJ7uMYOgcDX_Ye0jTFStfW3A7Zvze64dPhHj4O5x7G7gVfCK7gWSwQEcwFmwmudQ5CmEs245xDrrAU1-yG6DOdpQSYMVzH4Xv6yFxfZ1N0PY1DnLIxDmOIUxsoG5ps0y8pC2PbuWOIyemztVvSLbtqXEfh7qxztnt92a3e8u37erNabnMPBU658dpp3YBR0FQu1MpwlAZNUSltSpAFFwjSVN7zukKlUGpRYVG74DyCgjl7PMWmTl-HQJPdt-RD17k-DAeysjAoS64T-HQCfRyIYmjsGNu9i0cruP1dxgr7t0wiH86RjrzrmvS2b-kf16l3KTj8AFF9YFA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24892507</pqid></control><display><type>article</type><title>Growth and transport properties of InAs epilayers on GaAs</title><source>AIP Digital Archive</source><creator>KALEM, S ; CHYI, J.-I ; MORKOC, H ; BEAN, R ; ZANIO, K</creator><creatorcontrib>KALEM, S ; CHYI, J.-I ; MORKOC, H ; BEAN, R ; ZANIO, K</creatorcontrib><description>A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm−3) and peaks at about liquid-nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm−3) for a 6.2-μm-thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity-phonon-dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm−2 are found.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.99938</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Physics</subject><ispartof>Applied physics letters, 1988-10, Vol.53 (17), p.1647-1649</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-8c7a77f3863fbaed680928984b6785324019328bcc0db9669271b94daeac9363</citedby><cites>FETCH-LOGICAL-c349t-8c7a77f3863fbaed680928984b6785324019328bcc0db9669271b94daeac9363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7349510$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KALEM, S</creatorcontrib><creatorcontrib>CHYI, J.-I</creatorcontrib><creatorcontrib>MORKOC, H</creatorcontrib><creatorcontrib>BEAN, R</creatorcontrib><creatorcontrib>ZANIO, K</creatorcontrib><title>Growth and transport properties of InAs epilayers on GaAs</title><title>Applied physics letters</title><description>A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm−3) and peaks at about liquid-nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm−3) for a 6.2-μm-thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity-phonon-dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm−2 are found.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kFFLwzAUhYMoOKf4F_og-tSZ5LZJ7uMYOgcDX_Ye0jTFStfW3A7Zvze64dPhHj4O5x7G7gVfCK7gWSwQEcwFmwmudQ5CmEs245xDrrAU1-yG6DOdpQSYMVzH4Xv6yFxfZ1N0PY1DnLIxDmOIUxsoG5ps0y8pC2PbuWOIyemztVvSLbtqXEfh7qxztnt92a3e8u37erNabnMPBU658dpp3YBR0FQu1MpwlAZNUSltSpAFFwjSVN7zukKlUGpRYVG74DyCgjl7PMWmTl-HQJPdt-RD17k-DAeysjAoS64T-HQCfRyIYmjsGNu9i0cruP1dxgr7t0wiH86RjrzrmvS2b-kf16l3KTj8AFF9YFA</recordid><startdate>19881024</startdate><enddate>19881024</enddate><creator>KALEM, S</creator><creator>CHYI, J.-I</creator><creator>MORKOC, H</creator><creator>BEAN, R</creator><creator>ZANIO, K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19881024</creationdate><title>Growth and transport properties of InAs epilayers on GaAs</title><author>KALEM, S ; CHYI, J.-I ; MORKOC, H ; BEAN, R ; ZANIO, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-8c7a77f3863fbaed680928984b6785324019328bcc0db9669271b94daeac9363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KALEM, S</creatorcontrib><creatorcontrib>CHYI, J.-I</creatorcontrib><creatorcontrib>MORKOC, H</creatorcontrib><creatorcontrib>BEAN, R</creatorcontrib><creatorcontrib>ZANIO, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KALEM, S</au><au>CHYI, J.-I</au><au>MORKOC, H</au><au>BEAN, R</au><au>ZANIO, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and transport properties of InAs epilayers on GaAs</atitle><jtitle>Applied physics letters</jtitle><date>1988-10-24</date><risdate>1988</risdate><volume>53</volume><issue>17</issue><spage>1647</spage><epage>1649</epage><pages>1647-1649</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi-insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm−3) and peaks at about liquid-nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm−3) for a 6.2-μm-thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity-phonon-dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm−2 are found.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99938</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics |
| title | Growth and transport properties of InAs epilayers on GaAs |
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