Low-Temperature As-Grown Crystalline β‑Ga2O3 Films via Plasma-Enhanced Atomic Layer Deposition

We report on the low-temperature growth of crystalline Ga2O3 films on Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. Films were deposited by using triethylgallium (TEG) and Ar/O2 plasma as metal precursor and oxygen...

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Veröffentlicht in:	ACS applied materials & interfaces 2021-02, Vol.13 (7), p.8538-8551
Hauptverfasser:	Ilhom, Saidjafarzoda, Mohammad, Adnan, Shukla, Deepa, Grasso, John, Willis, Brian G, Okyay, Ali Kemal, Biyikli, Necmi
Format:	Artikel
Sprache:	eng
Schlagworte:	Functional Inorganic Materials and Devices
Online-Zugang:	Volltext
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