Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)
CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-10, Vol.53 (18), p.1747-1749 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | RENO, J. L GOURLEY, P. L MONFROY, G FAURIE, J. P |
| description | CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had peaks with full width at half-maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate. |
| doi_str_mv | 10.1063/1.99777 |
| format | Article |
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L ; GOURLEY, P. L ; MONFROY, G ; FAURIE, J. P</creator><creatorcontrib>RENO, J. L ; GOURLEY, P. L ; MONFROY, G ; FAURIE, J. P ; Sandia National Laboratory, Albuquerque, New Mexico 87185</creatorcontrib><description>CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had peaks with full width at half-maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.99777</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360603 -- Materials-- Properties ; ARSENIC COMPOUNDS ; ARSENIDES ; CADMIUM COMPOUNDS ; CADMIUM TELLURIDES ; CHALCOGENIDES ; COATINGS ; COHERENT SCATTERING ; Condensed matter: structure, mechanical and thermal properties ; CRYSTAL DEFECTS ; CRYSTAL STRUCTURE ; DIFFRACTION ; DISLOCATIONS ; EPITAXY ; Exact sciences and technology ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; LINE DEFECTS ; LUMINESCENCE ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; MORPHOLOGY ; PHOTOLUMINESCENCE ; Physics ; PNICTIDES ; SCATTERING ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; TELLURIDES ; TELLURIUM COMPOUNDS 360602 -- Other Materials-- Structure & Phase Studies ; Thin film structure and morphology ; VAPOR DEPOSITED COATINGS ; X-RAY DIFFRACTION</subject><ispartof>Appl. 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L</creatorcontrib><creatorcontrib>MONFROY, G</creatorcontrib><creatorcontrib>FAURIE, J. P</creatorcontrib><creatorcontrib>Sandia National Laboratory, Albuquerque, New Mexico 87185</creatorcontrib><title>Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)</title><title>Appl. Phys. Lett.; (United States)</title><description>CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had peaks with full width at half-maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate.</description><subject>360603 -- Materials-- Properties</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CADMIUM COMPOUNDS</subject><subject>CADMIUM TELLURIDES</subject><subject>CHALCOGENIDES</subject><subject>COATINGS</subject><subject>COHERENT SCATTERING</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL STRUCTURE</subject><subject>DIFFRACTION</subject><subject>DISLOCATIONS</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>LINE DEFECTS</subject><subject>LUMINESCENCE</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>MORPHOLOGY</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SCATTERING</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>TELLURIDES</subject><subject>TELLURIUM COMPOUNDS 360602 -- Other Materials-- Structure & Phase Studies</subject><subject>Thin film structure and morphology</subject><subject>VAPOR DEPOSITED COATINGS</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kV1rFTEQhoMoeKziXwgitr3YNrObz8tyqFUoeNNeh2x2YiN7Nscki57-etOeIgwMwzzz8s4MIR-BXQCTwyVcGKOUekU2wJTqBgD9mmwYY0MnjYC35F0pv1op-mHYkMfrENDXQlOgZR1Lza4i3cWScsSluhrTQlvUB6Stufq6ZjfTfU57zDXi8-B2usMzADinP3P6s9DxQHdpRr_OLtMR3Y7iPlb39_CkdOOuyhkwdv6evAluLvjhJZ-Q-6_Xd9tv3e2Pm-_bq9vOc2Zqp3s9cVCc-yDRSw5mCsKosedGjEoDF6hV6BVOGqUW42R6OY4ogQ9OCYHDCfl01E2lRlt8rOgffFqWtreVulkR0KAvR6ht9nvFUm27gcd5dgumtdiea6VAmgaeHkGfUykZg93nuHP5YIHZpwdYsM8PaOTnF0lXvJtDdouP5T8uhRHN3_APJPCDUg</recordid><startdate>19881031</startdate><enddate>19881031</enddate><creator>RENO, J. L</creator><creator>GOURLEY, P. L</creator><creator>MONFROY, G</creator><creator>FAURIE, J. P</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19881031</creationdate><title>Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)</title><author>RENO, J. L ; GOURLEY, P. L ; MONFROY, G ; FAURIE, J. P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c409t-828d41744cf6ec6419df597b2495b78145e87f27ed8e685bd926bbe6143a755e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>360603 -- Materials-- Properties</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CADMIUM COMPOUNDS</topic><topic>CADMIUM TELLURIDES</topic><topic>CHALCOGENIDES</topic><topic>COATINGS</topic><topic>COHERENT SCATTERING</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL STRUCTURE</topic><topic>DIFFRACTION</topic><topic>DISLOCATIONS</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>LINE DEFECTS</topic><topic>LUMINESCENCE</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>MORPHOLOGY</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SCATTERING</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS 360602 -- Other Materials-- Structure & Phase Studies</topic><topic>Thin film structure and morphology</topic><topic>VAPOR DEPOSITED COATINGS</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>RENO, J. L</creatorcontrib><creatorcontrib>GOURLEY, P. L</creatorcontrib><creatorcontrib>MONFROY, G</creatorcontrib><creatorcontrib>FAURIE, J. P</creatorcontrib><creatorcontrib>Sandia National Laboratory, Albuquerque, New Mexico 87185</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>RENO, J. L</au><au>GOURLEY, P. L</au><au>MONFROY, G</au><au>FAURIE, J. P</au><aucorp>Sandia National Laboratory, Albuquerque, New Mexico 87185</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1988-10-31</date><risdate>1988</risdate><volume>53</volume><issue>18</issue><spage>1747</spage><epage>1749</epage><pages>1747-1749</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had peaks with full width at half-maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99777</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Appl. Phys. Lett.; (United States), 1988-10, Vol.53 (18), p.1747-1749 |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | 360603 -- Materials-- Properties ARSENIC COMPOUNDS ARSENIDES CADMIUM COMPOUNDS CADMIUM TELLURIDES CHALCOGENIDES COATINGS COHERENT SCATTERING Condensed matter: structure, mechanical and thermal properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DIFFRACTION DISLOCATIONS EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS LINE DEFECTS LUMINESCENCE MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MORPHOLOGY PHOTOLUMINESCENCE Physics PNICTIDES SCATTERING Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) TELLURIDES TELLURIUM COMPOUNDS 360602 -- Other Materials-- Structure & Phase Studies Thin film structure and morphology VAPOR DEPOSITED COATINGS X-RAY DIFFRACTION |
| title | Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100) |
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