Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes

The dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments have been investigated. Reductions in 2kT perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage, observe...

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Veröffentlicht in:	Applied physics letters 1988-06, Vol.52 (25), p.2157-2159
Hauptverfasser:	CARPENTER, M. S, MELLOCH, M. R, LUNDSTROM, M. S, TOBIN, S. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_title	Applied physics letters
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creator	CARPENTER, M. S MELLOCH, M. R LUNDSTROM, M. S TOBIN, S. P
description	The dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments have been investigated. Reductions in 2kT perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage, observed at low forward bias for the Na2S treated devices, is virtually eliminated with the (NH4)2S treatment. It is also shown that even the high quality, large area (0.25 sq cm) pn diodes used in this study are dominated by 2kT edge currents before passivation.
doi_str_mv	10.1063/1.99563
format	Article
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CARPENTER, M. S</creatorcontrib><creatorcontrib>MELLOCH, M. R</creatorcontrib><creatorcontrib>LUNDSTROM, M. S</creatorcontrib><creatorcontrib>TOBIN, S. P</creatorcontrib><collection>Pascal-Francis</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CARPENTER, M. S</au><au>MELLOCH, M. R</au><au>LUNDSTROM, M. S</au><au>TOBIN, S. 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subjects	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes
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