Very short gate-length GaAs MESFET's
GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was o...
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| Veröffentlicht in: | IEEE electron device letters 1985-09, Vol.6 (9), p.471-472 |
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| container_end_page | 472 |
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| container_issue | 9 |
| container_start_page | 471 |
| container_title | IEEE electron device letters |
| container_volume | 6 |
| creator | Patrick, W. Mackie, W.S. Beaumont, S.P. Wilkinson, C.D.W. Oxley, C.H. |
| description | GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was observed that there is a maximum drain-source voltage that can be pinched off in these short gate devices. This voltage varies exponentially from 1 V in the 0.055-µm gate devices to 6 V in the 0.36-µm device. It is speculated that this effect is due to current injection into the buffer layer. |
| doi_str_mv | 10.1109/EDL.1985.26196 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_24872325</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1485349</ieee_id><sourcerecordid>28759723</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-742be05fc49c520383f2a4eb4b0a188ab2b60299cd0c9a4ed2c2b2ad3936019a3</originalsourceid><addsrcrecordid>eNqFkDtPwzAUhS0EEqWwsrBkqGBKuH4l9li1pSAVMfBYLce9aYPSptjp0H-PSysYma507nfO8BFyTSGjFPT9ZDzLqFYyYznV-QnpUSlVCjLnp6QHhaApp5Cfk4sQPgGoEIXokcEH-l0Slq3vkoXtMG1wveiWydQOQ_I8eX2YvN2FS3JW2Sbg1fH2yXvMR4_p7GX6NBrOUseF6tJCsBJBVk5oJxlwxStmBZaiBEuVsiUrc2Bauzk4HR9z5ljJ7JxrngPVlvfJ7WF349uvLYbOrOrgsGnsGtttMEwVUheM_w8KFTEmI5gdQOfbEDxWZuPrlfU7Q8HsrZlozeytmR9rsTA4LtvgbFN5u3Z1-G0VWoGSNGI3B6xGxL9NoSQXmn8DTc9x6g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24872325</pqid></control><display><type>article</type><title>Very short gate-length GaAs MESFET's</title><source>IEEE Electronic Library (IEL)</source><creator>Patrick, W. ; Mackie, W.S. ; Beaumont, S.P. ; Wilkinson, C.D.W. ; Oxley, C.H.</creator><creatorcontrib>Patrick, W. ; Mackie, W.S. ; Beaumont, S.P. ; Wilkinson, C.D.W. ; Oxley, C.H.</creatorcontrib><description>GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was observed that there is a maximum drain-source voltage that can be pinched off in these short gate devices. This voltage varies exponentially from 1 V in the 0.055-µm gate devices to 6 V in the 0.36-µm device. It is speculated that this effect is due to current injection into the buffer layer.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1985.26196</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Buffer layers ; Electronics ; Etching ; Exact sciences and technology ; Fabrication ; Gallium arsenide ; Lithography ; MESFETs ; Ohmic contacts ; Resists ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; Voltage</subject><ispartof>IEEE electron device letters, 1985-09, Vol.6 (9), p.471-472</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-742be05fc49c520383f2a4eb4b0a188ab2b60299cd0c9a4ed2c2b2ad3936019a3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1485349$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1485349$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7980851$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Patrick, W.</creatorcontrib><creatorcontrib>Mackie, W.S.</creatorcontrib><creatorcontrib>Beaumont, S.P.</creatorcontrib><creatorcontrib>Wilkinson, C.D.W.</creatorcontrib><creatorcontrib>Oxley, C.H.</creatorcontrib><title>Very short gate-length GaAs MESFET's</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was observed that there is a maximum drain-source voltage that can be pinched off in these short gate devices. This voltage varies exponentially from 1 V in the 0.055-µm gate devices to 6 V in the 0.36-µm device. It is speculated that this effect is due to current injection into the buffer layer.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Buffer layers</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Lithography</subject><subject>MESFETs</subject><subject>Ohmic contacts</subject><subject>Resists</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAUhS0EEqWwsrBkqGBKuH4l9li1pSAVMfBYLce9aYPSptjp0H-PSysYma507nfO8BFyTSGjFPT9ZDzLqFYyYznV-QnpUSlVCjLnp6QHhaApp5Cfk4sQPgGoEIXokcEH-l0Slq3vkoXtMG1wveiWydQOQ_I8eX2YvN2FS3JW2Sbg1fH2yXvMR4_p7GX6NBrOUseF6tJCsBJBVk5oJxlwxStmBZaiBEuVsiUrc2Bauzk4HR9z5ljJ7JxrngPVlvfJ7WF349uvLYbOrOrgsGnsGtttMEwVUheM_w8KFTEmI5gdQOfbEDxWZuPrlfU7Q8HsrZlozeytmR9rsTA4LtvgbFN5u3Z1-G0VWoGSNGI3B6xGxL9NoSQXmn8DTc9x6g</recordid><startdate>19850901</startdate><enddate>19850901</enddate><creator>Patrick, W.</creator><creator>Mackie, W.S.</creator><creator>Beaumont, S.P.</creator><creator>Wilkinson, C.D.W.</creator><creator>Oxley, C.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19850901</creationdate><title>Very short gate-length GaAs MESFET's</title><author>Patrick, W. ; Mackie, W.S. ; Beaumont, S.P. ; Wilkinson, C.D.W. ; Oxley, C.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-742be05fc49c520383f2a4eb4b0a188ab2b60299cd0c9a4ed2c2b2ad3936019a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Buffer layers</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Gallium arsenide</topic><topic>Lithography</topic><topic>MESFETs</topic><topic>Ohmic contacts</topic><topic>Resists</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Patrick, W.</creatorcontrib><creatorcontrib>Mackie, W.S.</creatorcontrib><creatorcontrib>Beaumont, S.P.</creatorcontrib><creatorcontrib>Wilkinson, C.D.W.</creatorcontrib><creatorcontrib>Oxley, C.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Patrick, W.</au><au>Mackie, W.S.</au><au>Beaumont, S.P.</au><au>Wilkinson, C.D.W.</au><au>Oxley, C.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Very short gate-length GaAs MESFET's</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1985-09-01</date><risdate>1985</risdate><volume>6</volume><issue>9</issue><spage>471</spage><epage>472</epage><pages>471-472</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>GaAs MESFET's with gate lengths ranging from 0.36 µm down to 0.055 µm, the smallest so far reported, have been fabricated using electron-beam lithography. DC output characteristics were obtained from all of the devices tested and transconductances up to 300 mS/mm were measured. However it was observed that there is a maximum drain-source voltage that can be pinched off in these short gate devices. This voltage varies exponentially from 1 V in the 0.055-µm gate devices to 6 V in the 0.36-µm device. It is speculated that this effect is due to current injection into the buffer layer.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1985.26196</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1985-09, Vol.6 (9), p.471-472 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24872325 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Buffer layers Electronics Etching Exact sciences and technology Fabrication Gallium arsenide Lithography MESFETs Ohmic contacts Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage |
| title | Very short gate-length GaAs MESFET's |
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