Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers
A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold curre...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-10, Vol.53 (15), p.1366-1368 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | BOTEZ, D HAYASHIDA, P MAWST, L. J ROTH, T. J |
| description | A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning. |
| doi_str_mv | 10.1063/1.99980 |
| format | Article |
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J ; ROTH, T. J</creator><creatorcontrib>BOTEZ, D ; HAYASHIDA, P ; MAWST, L. J ; ROTH, T. J ; TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</creatorcontrib><description>A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). 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J</creatorcontrib><creatorcontrib>ROTH, T. J</creatorcontrib><creatorcontrib>TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</creatorcontrib><title>Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers</title><title>Appl. Phys. Lett.; (United States)</title><description>A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.</description><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CURRENTS</subject><subject>DATA</subject><subject>DESIGN</subject><subject>ELECTRIC CURRENTS</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INFORMATION</subject><subject>LASERS</subject><subject>NUMERICAL DATA</subject><subject>OPERATION</subject><subject>Optics</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>POWER</subject><subject>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>THRESHOLD CURRENT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo90E1LxDAQBuAgCq4f-BeCiF7MmjRt2hyX9RMWvCh4C9lk4kbTpiZdxX9v1xUvMww8MzAvQieMThkV_IpNpZQN3UETRuuacMaaXTShlHIiZMX20UHOb-NYFZxP0Oe1dy5pM_jYkeBbP4AlS9DtJV751xXp4xckHHtIekOwS7HFL-Rt3f2uYBPXfQCL-5XOQEI07-OgU9LfGUeHZ-FOz_LVpmDrowUcRpfyEdpzOmQ4_uuH6Pn25ml-TxaPdw_z2YIYzuhAuGh4JUtbGGatWAopClHyqmC1rUE75zRYcLIEaWXd1LWUpdPFctyqqXO04YfodHs35sGrbMb3zMrErgMzKNGUTFYbdL5FfYofa8iDan02EILuIK6zKsqm4qJkI7zYQpNizgmc6pNvdfpWjKpN-Iqp3_BHefZ3Umejw5hwZ3z-50Lwsqg4_wEWIIM8</recordid><startdate>19881010</startdate><enddate>19881010</enddate><creator>BOTEZ, D</creator><creator>HAYASHIDA, P</creator><creator>MAWST, L. 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J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c310t-3683594d2c1dd6b69626435217d7eafffaedef94e9d97877994fa2b68370ff083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CURRENTS</topic><topic>DATA</topic><topic>DESIGN</topic><topic>ELECTRIC CURRENTS</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INFORMATION</topic><topic>LASERS</topic><topic>NUMERICAL DATA</topic><topic>OPERATION</topic><topic>Optics</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>POWER</topic><topic>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>THRESHOLD CURRENT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOTEZ, D</creatorcontrib><creatorcontrib>HAYASHIDA, P</creatorcontrib><creatorcontrib>MAWST, L. 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J</au><aucorp>TRW Space and Technology Group, One Space Park, M5/1065, Redondo Beach, California 90278</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1988-10-10</date><risdate>1988</risdate><volume>53</volume><issue>15</issue><spage>1366</spage><epage>1368</epage><pages>1366-1368</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99980</doi><tpages>3</tpages></addata></record> |
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| ispartof | Appl. Phys. Lett.; (United States), 1988-10, Vol.53 (15), p.1366-1368 |
| issn | 0003-6951 1077-3118 |
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| subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS DATA DESIGN ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS NUMERICAL DATA OPERATION Optics Physics PNICTIDES POWER SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT |
| title | Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers |
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