The interaction of hafnium and aluminium thin films on silicon substrates

A thin hafnium film (100–200 Å) is frequently used as a current-carrying bottom layer when anodization is used in aluminium interconnect patterning for integrated circuits. Unfortunately severe pitting in contact holes occurs on annealing (400–500°C), precluding the use of the process for shallow ju...

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Veröffentlicht in:	Thin solid films 1985-03, Vol.125 (3), p.335-340
Hauptverfasser:	Raaijmakers, I.J.M.M., Daams, J.L.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals, semimetals and alloys Physics Solid surfaces and solid-solid interfaces Specific materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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