Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor

We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth...

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Veröffentlicht in:	ACS applied materials & interfaces 2021-02, Vol.13 (5), p.6805-6812
Hauptverfasser:	Ahn, Chaehyeon, Park, Younghee, Shin, Seunghyun, Ahn, Jong-Guk, Song, Intek, An, Youngjoon, Jung, Jaehoon, Kim, Chung Soo, Kim, Jee Hyeon, Bang, Jiwon, Kim, Daehyun, Baik, Jaeyoon, Lim, Hyunseob
Format:	Artikel
Sprache:	eng
Schlagworte:	Surfaces, Interfaces, and Applications
Online-Zugang:	Volltext
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