Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor

Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor

We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth...

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Veröffentlicht in:ACS applied materials & interfaces 2021-02, Vol.13 (5), p.6805-6812
Hauptverfasser: Ahn, Chaehyeon, Park, Younghee, Shin, Seunghyun, Ahn, Jong-Guk, Song, Intek, An, Youngjoon, Jung, Jaehoon, Kim, Chung Soo, Kim, Jee Hyeon, Bang, Jiwon, Kim, Daehyun, Baik, Jaeyoon, Lim, Hyunseob
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container_end_page 6812
container_issue 5
container_start_page 6805
container_title ACS applied materials & interfaces
container_volume 13
creator Ahn, Chaehyeon
Park, Younghee
Shin, Seunghyun
Ahn, Jong-Guk
Song, Intek
An, Youngjoon
Jung, Jaehoon
Kim, Chung Soo
Kim, Jee Hyeon
Bang, Jiwon
Kim, Daehyun
Baik, Jaeyoon
Lim, Hyunseob
description We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.
doi_str_mv 10.1021/acsami.0c19591
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fullrecord <record><control><sourceid>proquest_acs_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_2481663760</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2481663760</sourcerecordid><originalsourceid>FETCH-LOGICAL-a153t-7d18c432da9961d15c18be073107443962f58d46b2091ee996fdf6a0f2725ec03</originalsourceid><addsrcrecordid>eNpFkV1LwzAUhoMoOKe3XudShM18NW29k-HmYMXB5nXJ0tR2ZIkmraO_xr9qaodenXPCcx4OeQG4xWiKEcEPQnpxqKdI4jRK8RkY4ZSxSUIicv7XM3YJrrzfI8QpQdEIfC-cPTYVtCXMrLFadMpBYQqYtbqphzGzGwLntT54uOvgRmklm9qafue0ndlCPcLt0cK1aKqj6Dz8qgWcVepQe-s-fvHeuq46__8SBMLApbHuXZhaBk1Qt1o4uHahcQG8Bhel0F7dnOoYvM2ft7OXyep1sZw9rSYCR7SZxAVOJKOkEGnKcYEjiZOdQjHFKGaMppyUUVIwviMoxUoFqCxKLlBJYhIpiegY3A3eD2c_W-WbPFwuldbCKNv6nLAEc05j3qP3Axo-PN_b1plwWI5R3qeQDynkpxToD-abfdU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2481663760</pqid></control><display><type>article</type><title>Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor</title><source>ACS Publications</source><creator>Ahn, Chaehyeon ; Park, Younghee ; Shin, Seunghyun ; Ahn, Jong-Guk ; Song, Intek ; An, Youngjoon ; Jung, Jaehoon ; Kim, Chung Soo ; Kim, Jee Hyeon ; Bang, Jiwon ; Kim, Daehyun ; Baik, Jaeyoon ; Lim, Hyunseob</creator><creatorcontrib>Ahn, Chaehyeon ; Park, Younghee ; Shin, Seunghyun ; Ahn, Jong-Guk ; Song, Intek ; An, Youngjoon ; Jung, Jaehoon ; Kim, Chung Soo ; Kim, Jee Hyeon ; Bang, Jiwon ; Kim, Daehyun ; Baik, Jaeyoon ; Lim, Hyunseob</creatorcontrib><description>We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.0c19591</identifier><language>eng</language><publisher>American Chemical Society</publisher><subject>Surfaces, Interfaces, and Applications</subject><ispartof>ACS applied materials &amp; interfaces, 2021-02, Vol.13 (5), p.6805-6812</ispartof><rights>2021 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4956-4208 ; 0000-0001-6550-139X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsami.0c19591$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsami.0c19591$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27067,27915,27916,56729,56779</link.rule.ids></links><search><creatorcontrib>Ahn, Chaehyeon</creatorcontrib><creatorcontrib>Park, Younghee</creatorcontrib><creatorcontrib>Shin, Seunghyun</creatorcontrib><creatorcontrib>Ahn, Jong-Guk</creatorcontrib><creatorcontrib>Song, Intek</creatorcontrib><creatorcontrib>An, Youngjoon</creatorcontrib><creatorcontrib>Jung, Jaehoon</creatorcontrib><creatorcontrib>Kim, Chung Soo</creatorcontrib><creatorcontrib>Kim, Jee Hyeon</creatorcontrib><creatorcontrib>Bang, Jiwon</creatorcontrib><creatorcontrib>Kim, Daehyun</creatorcontrib><creatorcontrib>Baik, Jaeyoon</creatorcontrib><creatorcontrib>Lim, Hyunseob</creatorcontrib><title>Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.</description><subject>Surfaces, Interfaces, and Applications</subject><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpFkV1LwzAUhoMoOKe3XudShM18NW29k-HmYMXB5nXJ0tR2ZIkmraO_xr9qaodenXPCcx4OeQG4xWiKEcEPQnpxqKdI4jRK8RkY4ZSxSUIicv7XM3YJrrzfI8QpQdEIfC-cPTYVtCXMrLFadMpBYQqYtbqphzGzGwLntT54uOvgRmklm9qafue0ndlCPcLt0cK1aKqj6Dz8qgWcVepQe-s-fvHeuq46__8SBMLApbHuXZhaBk1Qt1o4uHahcQG8Bhel0F7dnOoYvM2ft7OXyep1sZw9rSYCR7SZxAVOJKOkEGnKcYEjiZOdQjHFKGaMppyUUVIwviMoxUoFqCxKLlBJYhIpiegY3A3eD2c_W-WbPFwuldbCKNv6nLAEc05j3qP3Axo-PN_b1plwWI5R3qeQDynkpxToD-abfdU</recordid><startdate>20210210</startdate><enddate>20210210</enddate><creator>Ahn, Chaehyeon</creator><creator>Park, Younghee</creator><creator>Shin, Seunghyun</creator><creator>Ahn, Jong-Guk</creator><creator>Song, Intek</creator><creator>An, Youngjoon</creator><creator>Jung, Jaehoon</creator><creator>Kim, Chung Soo</creator><creator>Kim, Jee Hyeon</creator><creator>Bang, Jiwon</creator><creator>Kim, Daehyun</creator><creator>Baik, Jaeyoon</creator><creator>Lim, Hyunseob</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4956-4208</orcidid><orcidid>https://orcid.org/0000-0001-6550-139X</orcidid></search><sort><creationdate>20210210</creationdate><title>Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor</title><author>Ahn, Chaehyeon ; Park, Younghee ; Shin, Seunghyun ; Ahn, Jong-Guk ; Song, Intek ; An, Youngjoon ; Jung, Jaehoon ; Kim, Chung Soo ; Kim, Jee Hyeon ; Bang, Jiwon ; Kim, Daehyun ; Baik, Jaeyoon ; Lim, Hyunseob</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a153t-7d18c432da9961d15c18be073107443962f58d46b2091ee996fdf6a0f2725ec03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Surfaces, Interfaces, and Applications</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahn, Chaehyeon</creatorcontrib><creatorcontrib>Park, Younghee</creatorcontrib><creatorcontrib>Shin, Seunghyun</creatorcontrib><creatorcontrib>Ahn, Jong-Guk</creatorcontrib><creatorcontrib>Song, Intek</creatorcontrib><creatorcontrib>An, Youngjoon</creatorcontrib><creatorcontrib>Jung, Jaehoon</creatorcontrib><creatorcontrib>Kim, Chung Soo</creatorcontrib><creatorcontrib>Kim, Jee Hyeon</creatorcontrib><creatorcontrib>Bang, Jiwon</creatorcontrib><creatorcontrib>Kim, Daehyun</creatorcontrib><creatorcontrib>Baik, Jaeyoon</creatorcontrib><creatorcontrib>Lim, Hyunseob</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ahn, Chaehyeon</au><au>Park, Younghee</au><au>Shin, Seunghyun</au><au>Ahn, Jong-Guk</au><au>Song, Intek</au><au>An, Youngjoon</au><au>Jung, Jaehoon</au><au>Kim, Chung Soo</au><au>Kim, Jee Hyeon</au><au>Bang, Jiwon</au><au>Kim, Daehyun</au><au>Baik, Jaeyoon</au><au>Lim, Hyunseob</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2021-02-10</date><risdate>2021</risdate><volume>13</volume><issue>5</issue><spage>6805</spage><epage>6812</epage><pages>6805-6812</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.0c19591</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-4956-4208</orcidid><orcidid>https://orcid.org/0000-0001-6550-139X</orcidid></addata></record>
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title Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T21%3A22%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_acs_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20Monolayer%20and%20Multilayer%20MoS2%20Films%20by%20Selection%20of%20Growth%20Mode:%20Two%20Pathways%20via%20Chemisorption%20and%20Physisorption%20of%20an%20Inorganic%20Molecular%20Precursor&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Ahn,%20Chaehyeon&rft.date=2021-02-10&rft.volume=13&rft.issue=5&rft.spage=6805&rft.epage=6812&rft.pages=6805-6812&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.0c19591&rft_dat=%3Cproquest_acs_j%3E2481663760%3C/proquest_acs_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2481663760&rft_id=info:pmid/&rfr_iscdi=true