Studies on the origin of subgrain boundaries in cast polycrystalline silicon using ebic and X-ray topography

X-ray topography and low-temperature EBIC measurements have been used in a complementary way to study the structural and electrical properties of lattice defects in cast polycrystalline silicon material. The origin of subgrain boundaries in the material and their effect on excess carrier recombinati...

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Veröffentlicht in:Materials letters 1985-01, Vol.3 (11), p.419-424
Hauptverfasser: Johnson, S.M., Yoo, K.C.
Format: Artikel
Sprache:eng
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