MOSFET dose measurements for proton SOBP beam

•Depth-dose in water for proton SOBP beam was measured by ion chamber and MOSFET.•Lower MOSFET outputs were due to electron-hole recombination in the oxide layer.•For a Bragg peak, proton LET was determined from residual range or residual energy.•Dose-weighted correction factor for the SOBP was deri...

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Veröffentlicht in:	Physica medica 2021-01, Vol.81, p.185-190
Hauptverfasser:	Hsing, Chun-Hui, Oanh, Luu Dang Hoang, Chao, Tsi-Chian, Lee, Chung-Chi, Hong, Ji-Hong, Cheng, Chun-Chi, Tseng, Chien-Kai, Tung, Chuan-Jong
Format:	Artikel
Sprache:	eng
Schlagworte:	Dose-weighted correction factor LET dependence MOSFET dosimeter Recombination effect Residual range
Online-Zugang:	Volltext
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