Deactivation/Activation of Quenching Defects in CH3NH3PbI3 Perovskite by Direct Electron Injection/Extraction

Organometal halide perovskites (OMHPs) have emerged as advisible materials for application in optoelectronic devices over the past decade. However, a variety of complex slow responses in OMHPs under an external electric field have been observed, and the mechanisms for these responses remain a topic of intense debate. In this work, with an external voltage applied to the CH3NH3PbI3 crystal, reversible photoluminescence (PL) enhancement and quenching behaviors respectively near the anode and the cathode were observed under wide-field fluorescence microscopy. Further experiments attribute the reversible PL enhancing responses to the electron injection effect increasing the radiative recombination, while PL quenching was attributed to be due to the electron extraction effect increasing the nonradiative recombination. The control of PL by external applied voltage indicates brilliant carrier mobility in the CH3NH3PbI3 crystal and also reminds us to focus on the effect of hole/electron injection on the materials which may limit the performance of perovskite-based optoelectronic devices.