Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane

We propose a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifter using an ultrathin InP membrane, which allows us to eliminate the III-V taper required for mode conversion between Si and hybrid waveguides. We numerically revealed that thinning a III-V membrane can reduce the insert...

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Veröffentlicht in:Optics express 2020-11, Vol.28 (24), p.35663-35673
Hauptverfasser: Ohno, Shuhei, Li, Qiang, Sekine, Naoki, Fujikata, Junichi, Noguchi, Masataka, Takahashi, Shigeki, Toprasertpong, Kasidit, Takagi, Shinichi, Takenaka, Mitsuru
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container_end_page 35673
container_issue 24
container_start_page 35663
container_title Optics express
container_volume 28
creator Ohno, Shuhei
Li, Qiang
Sekine, Naoki
Fujikata, Junichi
Noguchi, Masataka
Takahashi, Shigeki
Toprasertpong, Kasidit
Takagi, Shinichi
Takenaka, Mitsuru
description We propose a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifter using an ultrathin InP membrane, which allows us to eliminate the III-V taper required for mode conversion between Si and hybrid waveguides. We numerically revealed that thinning a III-V membrane can reduce the insertion loss of the phase shifter while maintaining high modulation efficiency because the optical phase shift is induced by carrier accumulation at the MOS interface. We experimentally demonstrated the proposed optical phase shifter with an ultrathin InP membrane and achieved the modulation efficiency of 0.54 Vcm and the insertion loss of 0.055 dB. Since the taperless structure makes the hybrid integration easier and more flexible, the hybrid MOS optical phase shifter with an ultrathin III-V membrane is promising for large-scale Si programmable photonic integrated circuits.
doi_str_mv 10.1364/OE.405038
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title Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane
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