A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an impor...

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Veröffentlicht in:	Advanced materials (Weinheim) 2021-02, Vol.33 (7), p.e2007792-n/a
Hauptverfasser:	Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., Akinwande, Deji
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials Adsorption atomristors Conductivity Heterostructures Materials science Memristors Metal oxides Resistance resistive switching Scanning tunneling microscopy Switching Two dimensional materials
Online-Zugang:	Volltext
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