The effects of In doping on the heteroepitaxial growth of ZnS on GaP substrates
Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. In order to clarify the doping effects of In on the growth behavior, some In-doping experiments with various doping processes are performed. The reversal in the orientation dependence of the growth rate an...
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| Veröffentlicht in: | Journal of applied physics 1987-06, Vol.61 (11), p.5023-5026 |
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| container_issue | 11 |
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| container_title | Journal of applied physics |
| container_volume | 61 |
| creator | FUKE, S ARAKI, H KUWAHARA, K IMAI, T |
| description | Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. In order to clarify the doping effects of In on the growth behavior, some In-doping experiments with various doping processes are performed. The reversal in the orientation dependence of the growth rate and the improvement of the crystallinity of the epitaxial layers are caused by the existence of In atoms and/or In compounds at the growing surface of ZnS. The In atoms and/or In compounds which exist at the interface between the GaP substrate and ZnS epitaxial layer are shown to have no significant effect on the growth behavior. |
| doi_str_mv | 10.1063/1.338323 |
| format | Article |
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In order to clarify the doping effects of In on the growth behavior, some In-doping experiments with various doping processes are performed. The reversal in the orientation dependence of the growth rate and the improvement of the crystallinity of the epitaxial layers are caused by the existence of In atoms and/or In compounds at the growing surface of ZnS. 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In order to clarify the doping effects of In on the growth behavior, some In-doping experiments with various doping processes are performed. The reversal in the orientation dependence of the growth rate and the improvement of the crystallinity of the epitaxial layers are caused by the existence of In atoms and/or In compounds at the growing surface of ZnS. 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In order to clarify the doping effects of In on the growth behavior, some In-doping experiments with various doping processes are performed. The reversal in the orientation dependence of the growth rate and the improvement of the crystallinity of the epitaxial layers are caused by the existence of In atoms and/or In compounds at the growing surface of ZnS. The In atoms and/or In compounds which exist at the interface between the GaP substrate and ZnS epitaxial layer are shown to have no significant effect on the growth behavior.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.338323</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1987-06, Vol.61 (11), p.5023-5026 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24733288 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | The effects of In doping on the heteroepitaxial growth of ZnS on GaP substrates |
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