Nonadiabatic Effects on Defect Diffusion in Silicon-Doped Nanographenes

Single atom impurities in graphene, substitutional silicon defects in particular, have been observed to diffuse under electron beam irradiation. However, the relative importance of elastic and inelastic scattering in facilitating their mobility remains unclear. Here, we employ excited-state electron...

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Veröffentlicht in:	Nano letters 2021-01, Vol.21 (1), p.236-242
Hauptverfasser:	Lingerfelt, David B, Yu, Tao, Yoshimura, Anthony, Ganesh, Panchapakesan, Jakowski, Jacek, Sumpter, Bobby G
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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