Planar GaAs p-i-n photodiode with picosecond time response

A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in the wavelength range typical of GaAlAs diode lasers. An optoelectronic correlation measurement technique was used to determine the time resp...

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Veröffentlicht in:	Applied physics letters 1985-01, Vol.46 (2), p.191-193
Hauptverfasser:	LENTH, W, CHU, A, MAHONEY, L. J, MCCLELLAND, R. W, MOUNTAIN, R. W, SILVERSMITH, D. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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