Planar GaAs p-i-n photodiode with picosecond time response
A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in the wavelength range typical of GaAlAs diode lasers. An optoelectronic correlation measurement technique was used to determine the time resp...
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| Veröffentlicht in: | Applied physics letters 1985-01, Vol.46 (2), p.191-193 |
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| Format: | Artikel |
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| container_end_page | 193 |
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| container_issue | 2 |
| container_start_page | 191 |
| container_title | Applied physics letters |
| container_volume | 46 |
| creator | LENTH, W CHU, A MAHONEY, L. J MCCLELLAND, R. W MOUNTAIN, R. W SILVERSMITH, D. J |
| description | A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in the wavelength range typical of GaAlAs diode lasers. An optoelectronic correlation measurement technique was used to determine the time response. The device exhibits an impulse response of 19 ps full width at half-maximum to 4-ps near-infrared dye laser pulses with an external quantum efficiency of 15%. The device is operated at the low bias voltage of −2 V. The planar electrode design and fabrication on a semi-insulating substrate make the diode suitable for incorporation in monolithic optoelectronic circuits. |
| doi_str_mv | 10.1063/1.95680 |
| format | Article |
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J ; MCCLELLAND, R. W ; MOUNTAIN, R. W ; SILVERSMITH, D. J</creator><creatorcontrib>LENTH, W ; CHU, A ; MAHONEY, L. J ; MCCLELLAND, R. W ; MOUNTAIN, R. W ; SILVERSMITH, D. J</creatorcontrib><description>A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in the wavelength range typical of GaAlAs diode lasers. An optoelectronic correlation measurement technique was used to determine the time response. The device exhibits an impulse response of 19 ps full width at half-maximum to 4-ps near-infrared dye laser pulses with an external quantum efficiency of 15%. The device is operated at the low bias voltage of −2 V. The planar electrode design and fabrication on a semi-insulating substrate make the diode suitable for incorporation in monolithic optoelectronic circuits.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.95680</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The planar electrode design and fabrication on a semi-insulating substrate make the diode suitable for incorporation in monolithic optoelectronic circuits.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LENTH, W</creatorcontrib><creatorcontrib>CHU, A</creatorcontrib><creatorcontrib>MAHONEY, L. J</creatorcontrib><creatorcontrib>MCCLELLAND, R. W</creatorcontrib><creatorcontrib>MOUNTAIN, R. W</creatorcontrib><creatorcontrib>SILVERSMITH, D. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LENTH, W</au><au>CHU, A</au><au>MAHONEY, L. J</au><au>MCCLELLAND, R. W</au><au>MOUNTAIN, R. W</au><au>SILVERSMITH, D. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar GaAs p-i-n photodiode with picosecond time response</atitle><jtitle>Applied physics letters</jtitle><date>1985-01-15</date><risdate>1985</risdate><volume>46</volume><issue>2</issue><spage>191</spage><epage>193</epage><pages>191-193</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in the wavelength range typical of GaAlAs diode lasers. An optoelectronic correlation measurement technique was used to determine the time response. The device exhibits an impulse response of 19 ps full width at half-maximum to 4-ps near-infrared dye laser pulses with an external quantum efficiency of 15%. The device is operated at the low bias voltage of −2 V. The planar electrode design and fabrication on a semi-insulating substrate make the diode suitable for incorporation in monolithic optoelectronic circuits.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.95680</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 1985-01, Vol.46 (2), p.191-193 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24711405 |
| source | AIP Digital Archive |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Planar GaAs p-i-n photodiode with picosecond time response |
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