Surface structure of epitaxial NiSi sub 2 grown on Si(001) determined by low-energy ion scattering [LEIS] technique

LEIS technique distinguishes vacancies in a surface and determines their concentration.

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Veröffentlicht in:	Surface science 1987-01, Vol.186 (1-2), p.115-137
Hauptverfasser:	Huang, Judy H, Daley, R S, Shuh, D K
Format:	Artikel
Sprache:	eng
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description	LEIS technique distinguishes vacancies in a surface and determines their concentration.
format	Article
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source	Elsevier ScienceDirect Journals
title	Surface structure of epitaxial NiSi sub 2 grown on Si(001) determined by low-energy ion scattering [LEIS] technique
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