Interfacial properties of InP and phosphorus deposited at low temperature
We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface state...
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| Veröffentlicht in: | Applied physics letters 1985-01, Vol.47 (3), p.272-274 |
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| container_end_page | 274 |
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| container_issue | 3 |
| container_start_page | 272 |
| container_title | Applied physics letters |
| container_volume | 47 |
| creator | SCHACHTER, R OLEGO, D. J BAUMANN, J. A BUNZ, L. A RACCAH, P. M SPICER, W. E |
| description | We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface states, extracted from capacitance-voltage data on metal-insulator-capacitor diodes, is ∼1011/cm2 eV at 0.1 eV below the conduction-band minimum. The low density of states near the conduction band is interpreted as a reduction of phosphorus vacancies at the P-InP interface. |
| doi_str_mv | 10.1063/1.96188 |
| format | Article |
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J ; BAUMANN, J. A ; BUNZ, L. A ; RACCAH, P. M ; SPICER, W. E</creator><creatorcontrib>SCHACHTER, R ; OLEGO, D. J ; BAUMANN, J. A ; BUNZ, L. A ; RACCAH, P. M ; SPICER, W. E</creatorcontrib><description>We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface states, extracted from capacitance-voltage data on metal-insulator-capacitor diodes, is ∼1011/cm2 eV at 0.1 eV below the conduction-band minimum. 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| fulltext | fulltext |
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| ispartof | Applied physics letters, 1985-01, Vol.47 (3), p.272-274 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24702027 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Interfacial properties of InP and phosphorus deposited at low temperature |
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