Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube

The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoe...

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Veröffentlicht in:The journal of physical chemistry letters 2020-12, Vol.11 (24), p.10497-10503
Hauptverfasser: Hu, Yuecong, Chen, Shaochuang, Cong, Xin, Sun, Sida, Wu, Jiang-bin, Zhang, Daqi, Yang, Feng, Yang, Juan, Tan, Ping-Heng, Li, Yan
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container_end_page 10503
container_issue 24
container_start_page 10497
container_title The journal of physical chemistry letters
container_volume 11
creator Hu, Yuecong
Chen, Shaochuang
Cong, Xin
Sun, Sida
Wu, Jiang-bin
Zhang, Daqi
Yang, Feng
Yang, Juan
Tan, Ping-Heng
Li, Yan
description The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoexcited excitons by a continuum of low-energy electron–hole pairs near the Fermi level. Therefore, the ERS features have been thought to appear exclusively in M-SWNTs but not in semiconducting SWNTs (S-SWNTs), which are more desired in many application fields such as nanoelectronics and bioimaging. In this work, the experimental observation of the ERS features in suspended S-SWNTs is reported, the processes of which are accomplished via the available high-energy electron–hole pairs. The excitonic transition energies with an uncertainty in the order of ±1 meV can be directly obtained via the ERS spectra, compared to a typical uncertainty of ±10 meV in conventional electronic spectroscopies. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.
doi_str_mv 10.1021/acs.jpclett.0c03320
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2468337787</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2468337787</sourcerecordid><originalsourceid>FETCH-LOGICAL-a345t-ac8d70da448b3c72f80cefcbec7277eb5b08a5d758f7987c7e9ee847160ac6833</originalsourceid><addsrcrecordid>eNp9kE1PwzAMhiMEYmPwC5BQj1y6Jf1KekTTGEgTSAzOUeq6qFOblCQ98O_J2ECcOMWRn9eWH0KuGZ0zmrCFAjffDdCh93MKNE0TekKmrMxEzJnIT__UE3Lh3I7SoqSCn5NJYEVWsHJK1qsOwVujW4heVK90tAXlPdpWv0dt-I1uQF1jHW2xb8HoegS_7y2VrYyOnpQ2fqzwkpw1qnN4dXxn5O1-9bp8iDfP68fl3SZWaZb7WIGoOa1VlokqBZ40ggI2UGGoOccqr6hQec1z0fBScOBYIoqMs4IqKESazsjtYe5gzceIzsu-dYBdpzSa0ckk21OcCx7Q9ICCNc5ZbORg217ZT8mo3BuUwaA8GpRHgyF1c1wwVj3Wv5kfZQFYHIDvtBmtDvf-O_ILvX2AUA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2468337787</pqid></control><display><type>article</type><title>Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube</title><source>American Chemical Society Journals</source><creator>Hu, Yuecong ; Chen, Shaochuang ; Cong, Xin ; Sun, Sida ; Wu, Jiang-bin ; Zhang, Daqi ; Yang, Feng ; Yang, Juan ; Tan, Ping-Heng ; Li, Yan</creator><creatorcontrib>Hu, Yuecong ; Chen, Shaochuang ; Cong, Xin ; Sun, Sida ; Wu, Jiang-bin ; Zhang, Daqi ; Yang, Feng ; Yang, Juan ; Tan, Ping-Heng ; Li, Yan</creatorcontrib><description>The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoexcited excitons by a continuum of low-energy electron–hole pairs near the Fermi level. Therefore, the ERS features have been thought to appear exclusively in M-SWNTs but not in semiconducting SWNTs (S-SWNTs), which are more desired in many application fields such as nanoelectronics and bioimaging. In this work, the experimental observation of the ERS features in suspended S-SWNTs is reported, the processes of which are accomplished via the available high-energy electron–hole pairs. The excitonic transition energies with an uncertainty in the order of ±1 meV can be directly obtained via the ERS spectra, compared to a typical uncertainty of ±10 meV in conventional electronic spectroscopies. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.</description><identifier>ISSN: 1948-7185</identifier><identifier>EISSN: 1948-7185</identifier><identifier>DOI: 10.1021/acs.jpclett.0c03320</identifier><identifier>PMID: 33284619</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Physical Insights into Materials and Molecular Properties</subject><ispartof>The journal of physical chemistry letters, 2020-12, Vol.11 (24), p.10497-10503</ispartof><rights>2020 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a345t-ac8d70da448b3c72f80cefcbec7277eb5b08a5d758f7987c7e9ee847160ac6833</citedby><cites>FETCH-LOGICAL-a345t-ac8d70da448b3c72f80cefcbec7277eb5b08a5d758f7987c7e9ee847160ac6833</cites><orcidid>0000-0001-5502-9351 ; 0000-0001-6575-1516 ; 0000-0002-3828-8340 ; 0000-0002-3637-814X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c03320$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.jpclett.0c03320$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/33284619$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hu, Yuecong</creatorcontrib><creatorcontrib>Chen, Shaochuang</creatorcontrib><creatorcontrib>Cong, Xin</creatorcontrib><creatorcontrib>Sun, Sida</creatorcontrib><creatorcontrib>Wu, Jiang-bin</creatorcontrib><creatorcontrib>Zhang, Daqi</creatorcontrib><creatorcontrib>Yang, Feng</creatorcontrib><creatorcontrib>Yang, Juan</creatorcontrib><creatorcontrib>Tan, Ping-Heng</creatorcontrib><creatorcontrib>Li, Yan</creatorcontrib><title>Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube</title><title>The journal of physical chemistry letters</title><addtitle>J. Phys. Chem. Lett</addtitle><description>The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoexcited excitons by a continuum of low-energy electron–hole pairs near the Fermi level. Therefore, the ERS features have been thought to appear exclusively in M-SWNTs but not in semiconducting SWNTs (S-SWNTs), which are more desired in many application fields such as nanoelectronics and bioimaging. In this work, the experimental observation of the ERS features in suspended S-SWNTs is reported, the processes of which are accomplished via the available high-energy electron–hole pairs. The excitonic transition energies with an uncertainty in the order of ±1 meV can be directly obtained via the ERS spectra, compared to a typical uncertainty of ±10 meV in conventional electronic spectroscopies. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.</description><subject>Physical Insights into Materials and Molecular Properties</subject><issn>1948-7185</issn><issn>1948-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1PwzAMhiMEYmPwC5BQj1y6Jf1KekTTGEgTSAzOUeq6qFOblCQ98O_J2ECcOMWRn9eWH0KuGZ0zmrCFAjffDdCh93MKNE0TekKmrMxEzJnIT__UE3Lh3I7SoqSCn5NJYEVWsHJK1qsOwVujW4heVK90tAXlPdpWv0dt-I1uQF1jHW2xb8HoegS_7y2VrYyOnpQ2fqzwkpw1qnN4dXxn5O1-9bp8iDfP68fl3SZWaZb7WIGoOa1VlokqBZ40ggI2UGGoOccqr6hQec1z0fBScOBYIoqMs4IqKESazsjtYe5gzceIzsu-dYBdpzSa0ckk21OcCx7Q9ICCNc5ZbORg217ZT8mo3BuUwaA8GpRHgyF1c1wwVj3Wv5kfZQFYHIDvtBmtDvf-O_ILvX2AUA</recordid><startdate>20201217</startdate><enddate>20201217</enddate><creator>Hu, Yuecong</creator><creator>Chen, Shaochuang</creator><creator>Cong, Xin</creator><creator>Sun, Sida</creator><creator>Wu, Jiang-bin</creator><creator>Zhang, Daqi</creator><creator>Yang, Feng</creator><creator>Yang, Juan</creator><creator>Tan, Ping-Heng</creator><creator>Li, Yan</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-5502-9351</orcidid><orcidid>https://orcid.org/0000-0001-6575-1516</orcidid><orcidid>https://orcid.org/0000-0002-3828-8340</orcidid><orcidid>https://orcid.org/0000-0002-3637-814X</orcidid></search><sort><creationdate>20201217</creationdate><title>Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube</title><author>Hu, Yuecong ; Chen, Shaochuang ; Cong, Xin ; Sun, Sida ; Wu, Jiang-bin ; Zhang, Daqi ; Yang, Feng ; Yang, Juan ; Tan, Ping-Heng ; Li, Yan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a345t-ac8d70da448b3c72f80cefcbec7277eb5b08a5d758f7987c7e9ee847160ac6833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Physical Insights into Materials and Molecular Properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Yuecong</creatorcontrib><creatorcontrib>Chen, Shaochuang</creatorcontrib><creatorcontrib>Cong, Xin</creatorcontrib><creatorcontrib>Sun, Sida</creatorcontrib><creatorcontrib>Wu, Jiang-bin</creatorcontrib><creatorcontrib>Zhang, Daqi</creatorcontrib><creatorcontrib>Yang, Feng</creatorcontrib><creatorcontrib>Yang, Juan</creatorcontrib><creatorcontrib>Tan, Ping-Heng</creatorcontrib><creatorcontrib>Li, Yan</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>The journal of physical chemistry letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Yuecong</au><au>Chen, Shaochuang</au><au>Cong, Xin</au><au>Sun, Sida</au><au>Wu, Jiang-bin</au><au>Zhang, Daqi</au><au>Yang, Feng</au><au>Yang, Juan</au><au>Tan, Ping-Heng</au><au>Li, Yan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube</atitle><jtitle>The journal of physical chemistry letters</jtitle><addtitle>J. Phys. Chem. Lett</addtitle><date>2020-12-17</date><risdate>2020</risdate><volume>11</volume><issue>24</issue><spage>10497</spage><epage>10503</epage><pages>10497-10503</pages><issn>1948-7185</issn><eissn>1948-7185</eissn><abstract>The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures. Previously, the ERS processes have been exclusively reported in metallic SWNTs (M-SWNTs) and attributed to the inelastic scattering of photoexcited excitons by a continuum of low-energy electron–hole pairs near the Fermi level. Therefore, the ERS features have been thought to appear exclusively in M-SWNTs but not in semiconducting SWNTs (S-SWNTs), which are more desired in many application fields such as nanoelectronics and bioimaging. In this work, the experimental observation of the ERS features in suspended S-SWNTs is reported, the processes of which are accomplished via the available high-energy electron–hole pairs. The excitonic transition energies with an uncertainty in the order of ±1 meV can be directly obtained via the ERS spectra, compared to a typical uncertainty of ±10 meV in conventional electronic spectroscopies. The ERS features can facilitate further systematic studies on the properties of SWNT, both metallic and semiconducting, with defined chirality.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>33284619</pmid><doi>10.1021/acs.jpclett.0c03320</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5502-9351</orcidid><orcidid>https://orcid.org/0000-0001-6575-1516</orcidid><orcidid>https://orcid.org/0000-0002-3828-8340</orcidid><orcidid>https://orcid.org/0000-0002-3637-814X</orcidid></addata></record>
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title Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T02%3A21%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electronic%20Raman%20Scattering%20in%20Suspended%20Semiconducting%20Carbon%20Nanotube&rft.jtitle=The%20journal%20of%20physical%20chemistry%20letters&rft.au=Hu,%20Yuecong&rft.date=2020-12-17&rft.volume=11&rft.issue=24&rft.spage=10497&rft.epage=10503&rft.pages=10497-10503&rft.issn=1948-7185&rft.eissn=1948-7185&rft_id=info:doi/10.1021/acs.jpclett.0c03320&rft_dat=%3Cproquest_cross%3E2468337787%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2468337787&rft_id=info:pmid/33284619&rfr_iscdi=true