Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Significant control over the properties of a high-carrier density superconductor via an applied electric field has been considered infeasible due to screening of the field over atomic length scales. Here, we demonstrate an enhancement of up to 30% in critical current in a back-gate tunable NbN micro...

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Veröffentlicht in:	Nano letters 2021-01, Vol.21 (1), p.216-221
Hauptverfasser:	Rocci, Mirko, Suri, Dhavala, Kamra, Akashdeep, Gilvânia Vilela, Takamura, Yota, Nemes, Norbert M, Martinez, Jose L, Hernandez, Mar Garcia, Moodera, Jagadeesh S
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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