Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si

Inert thermal anneals were performed at various temperatures to determine annealing kinetics of dry thermally grown SiO2 films on Si. Two stages of relaxation are demonstrated. The film relaxes quickly to an intermediate level, and then progresses more slowly toward full relaxation. The relaxation t...

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Veröffentlicht in:Applied physics letters 1987-11, Vol.51 (18), p.1416-1418
Hauptverfasser: LANDSBERGER, L. M, TILLER, W. A
Format: Artikel
Sprache:eng
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