High quality molecular beam epitaxial growth on patterned GaAs substrates

In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays....

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1985-10, Vol.47 (7), p.712-715
Hauptverfasser:	SMITH, J. S, DERRY, P. L, MARGALIT, S, YARIV, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences ARSENIC COMPOUNDS ARSENIDES ENGINEERING EPITAXY ETCHING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS LASERS MOLECULAR BEAM EPITAXY Optics Other techniques and industries Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SUBSTRATES SURFACE FINISHING 420300 > Engineering-- Lasers-- (-1989) TEMPERATURE EFFECTS VERY HIGH TEMPERATURE
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