High quality molecular beam epitaxial growth on patterned GaAs substrates
In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays....
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1985-10, Vol.47 (7), p.712-715 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 47 |
| creator | SMITH, J. S DERRY, P. L MARGALIT, S YARIV, A |
| description | In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE. |
| doi_str_mv | 10.1063/1.96012 |
| format | Article |
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This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96012</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; ARSENIC COMPOUNDS ; ARSENIDES ; ENGINEERING ; EPITAXY ; ETCHING ; Exact sciences and technology ; FABRICATION ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; LASERS ; MOLECULAR BEAM EPITAXY ; Optics ; Other techniques and industries ; Physics ; PNICTIDES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; SUBSTRATES ; SURFACE FINISHING 420300 -- Engineering-- Lasers-- (-1989) ; TEMPERATURE EFFECTS ; VERY HIGH TEMPERATURE</subject><ispartof>Appl. Phys. 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S</creatorcontrib><creatorcontrib>DERRY, P. L</creatorcontrib><creatorcontrib>MARGALIT, S</creatorcontrib><creatorcontrib>YARIV, A</creatorcontrib><creatorcontrib>California Institute of Technology, Pasadena, California 91125</creatorcontrib><title>High quality molecular beam epitaxial growth on patterned GaAs substrates</title><title>Appl. Phys. Lett.; (United States)</title><description>In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.</description><subject>Applied sciences</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>ENGINEERING</subject><subject>EPITAXY</subject><subject>ETCHING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>LASERS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Optics</subject><subject>Other techniques and industries</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>SUBSTRATES</subject><subject>SURFACE FINISHING 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>TEMPERATURE EFFECTS</subject><subject>VERY HIGH TEMPERATURE</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqN0EtLAzEUhuEgCtYq_oUgoqupucwkk2Up2hYKbnQdzmQybWRuTTJo_72jFbe6Ohx4eBcfQteUzCgR_IHOlCCUnaAJJVImnNL8FE0IITwRKqPn6CKEt_HNGOcTtF657Q7vB6hdPOCmq60ZavC4sNBg27sIHw5qvPXde9zhrsU9xGh9a0u8hHnAYShC9BBtuERnFdTBXv3cKXp9enxZrJLN83K9mG8Sk3IRkyqvUuCpFJxnqQKlbCWV4VkBVJSScSqJKFJalgUxpOLMmrI0hWBEAMkhl3yKbo7dLkSng3HRmp3p2taaqDOeM6nYiO6OqPfdfrAh6sYFY-saWtsNQbNUsHR0_4O5TEd4f4TGdyF4W-neuwb8QVOiv4bXVH8PP8rbnyQEA3XloTUu_PJcKimV-ouNKuNj7RPq3o0p</recordid><startdate>19851001</startdate><enddate>19851001</enddate><creator>SMITH, J. 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L ; MARGALIT, S ; YARIV, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-f8f4a347633549a99ef79c35ba16d7231706b41ddb0c0f32ecddcb6206a08a873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>ENGINEERING</topic><topic>EPITAXY</topic><topic>ETCHING</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>LASERS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Optics</topic><topic>Other techniques and industries</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>SUBSTRATES</topic><topic>SURFACE FINISHING 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>TEMPERATURE EFFECTS</topic><topic>VERY HIGH TEMPERATURE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SMITH, J. S</creatorcontrib><creatorcontrib>DERRY, P. L</creatorcontrib><creatorcontrib>MARGALIT, S</creatorcontrib><creatorcontrib>YARIV, A</creatorcontrib><creatorcontrib>California Institute of Technology, Pasadena, California 91125</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SMITH, J. S</au><au>DERRY, P. L</au><au>MARGALIT, S</au><au>YARIV, A</au><aucorp>California Institute of Technology, Pasadena, California 91125</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High quality molecular beam epitaxial growth on patterned GaAs substrates</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1985-10-01</date><risdate>1985</risdate><volume>47</volume><issue>7</issue><spage>712</spage><epage>715</epage><pages>712-715</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96012</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1985-10, Vol.47 (7), p.712-715 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| subjects | Applied sciences ARSENIC COMPOUNDS ARSENIDES ENGINEERING EPITAXY ETCHING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS LASERS MOLECULAR BEAM EPITAXY Optics Other techniques and industries Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SUBSTRATES SURFACE FINISHING 420300 -- Engineering-- Lasers-- (-1989) TEMPERATURE EFFECTS VERY HIGH TEMPERATURE |
| title | High quality molecular beam epitaxial growth on patterned GaAs substrates |
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