Lattice defects within grain volumes that affect the electrical quality of cast polycrystalline silicon solar-cell materials

Lattice defect structures within large grains of cast polycrystalline silicon have been investigated using optical microscopy, x-ray topography, and electron-beam-induced conductivity (EBIC) measurements. Optical observations through a series of wafers of an ingot indicate that kinks in high-angle g...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1985-03, Vol.57 (6), p.2258-2266
Hauptverfasser: YOO, K. C, JOHNSON, S. M, REGNAULT, W. F
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Sprache:eng
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