A high aspect ratio design approach to millimeter-wave HEMT structures

In MESFET and HEMT structures as the gate length is reduced below 0.5 µm in an attempt to achieve amplification at highest possible frequencies, it is essential that the depletion depth under the gate be also reduced in order to preserve a high aspect ratio that ensures a high device voltage gain fa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1985-01, Vol.32 (1), p.11-17
1. Verfasser:	Das, M.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Contact resistance Electronics Exact sciences and technology Gallium arsenide HEMTs Logic gates MODFETs Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!