A high aspect ratio design approach to millimeter-wave HEMT structures
In MESFET and HEMT structures as the gate length is reduced below 0.5 µm in an attempt to achieve amplification at highest possible frequencies, it is essential that the depletion depth under the gate be also reduced in order to preserve a high aspect ratio that ensures a high device voltage gain fa...
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Veröffentlicht in: | IEEE transactions on electron devices 1985-01, Vol.32 (1), p.11-17 |
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description | In MESFET and HEMT structures as the gate length is reduced below 0.5 µm in an attempt to achieve amplification at highest possible frequencies, it is essential that the depletion depth under the gate be also reduced in order to preserve a high aspect ratio that ensures a high device voltage gain factor (g m /g 0 ) and a reasonable value of stable power gain at high frequencies. Results based on this design approach indicate that an n-A1GaAs/GaAs HEMT structure with 0.25-µm gate length could provide stable power gain in excess of 6 dB at the unity current gain frequency of 92.4 GHz, and for an aspect ratio of ten it is difficult to reduce the gate length below 0.25 µm. |
doi_str_mv | 10.1109/T-ED.1985.21902 |
format | Article |
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Results based on this design approach indicate that an n-A1GaAs/GaAs HEMT structure with 0.25-µm gate length could provide stable power gain in excess of 6 dB at the unity current gain frequency of 92.4 GHz, and for an aspect ratio of ten it is difficult to reduce the gate length below 0.25 µm.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1985.21902</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Contact resistance ; Electronics ; Exact sciences and technology ; Gallium arsenide ; HEMTs ; Logic gates ; MODFETs ; Resistance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1985-01, Vol.32 (1), p.11-17</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-4edda95eb76ada7b8de09e328afb644507255ec5591915afdd270ba7235a0fad3</citedby><cites>FETCH-LOGICAL-c385t-4edda95eb76ada7b8de09e328afb644507255ec5591915afdd270ba7235a0fad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1484649$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4009,27902,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1484649$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9293430$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Das, M.B.</creatorcontrib><title>A high aspect ratio design approach to millimeter-wave HEMT structures</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In MESFET and HEMT structures as the gate length is reduced below 0.5 µm in an attempt to achieve amplification at highest possible frequencies, it is essential that the depletion depth under the gate be also reduced in order to preserve a high aspect ratio that ensures a high device voltage gain factor (g m /g 0 ) and a reasonable value of stable power gain at high frequencies. Results based on this design approach indicate that an n-A1GaAs/GaAs HEMT structure with 0.25-µm gate length could provide stable power gain in excess of 6 dB at the unity current gain frequency of 92.4 GHz, and for an aspect ratio of ten it is difficult to reduce the gate length below 0.25 µm.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Contact resistance</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>Resistance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNpFkDtPwzAUhS0EEqUwM7B4QGxp_UziseqDIhWxhNm6cW5ao7Qpdgri35NSBNPVlc75dPQRcsvZiHNmxkUyn424yfVIcMPEGRlwrbPEpCo9JwPGeJ4YmctLchXjW_-mSokBWUzoxq83FOIeXUcDdL6lFUa_3lHY70MLbkO7lm590_gtdhiST_hAupw_FzR24eC6Q8B4TS5qaCLe_N4heV3Mi-kyWb08Pk0nq8TJXHeJwqoCo7HMUqggK_MKmUEpcqjLfo9mmdAandaGG66hriqRsRIyITWwGio5JA8nbr_s_YCxs1sfHTYN7LA9RCtUKoRIWR8cn4IutDEGrO0--C2EL8uZPfqyhZ3P7NGX_fHVN-5_0RAdNHWAnfPxr2aEkUoewXenmEfEf6jKVaqM_AZDmXN7</recordid><startdate>198501</startdate><enddate>198501</enddate><creator>Das, M.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>198501</creationdate><title>A high aspect ratio design approach to millimeter-wave HEMT structures</title><author>Das, M.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-4edda95eb76ada7b8de09e328afb644507255ec5591915afdd270ba7235a0fad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Contact resistance</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>Resistance</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Das, M.B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Das, M.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high aspect ratio design approach to millimeter-wave HEMT structures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1985-01</date><risdate>1985</risdate><volume>32</volume><issue>1</issue><spage>11</spage><epage>17</epage><pages>11-17</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In MESFET and HEMT structures as the gate length is reduced below 0.5 µm in an attempt to achieve amplification at highest possible frequencies, it is essential that the depletion depth under the gate be also reduced in order to preserve a high aspect ratio that ensures a high device voltage gain factor (g m /g 0 ) and a reasonable value of stable power gain at high frequencies. Results based on this design approach indicate that an n-A1GaAs/GaAs HEMT structure with 0.25-µm gate length could provide stable power gain in excess of 6 dB at the unity current gain frequency of 92.4 GHz, and for an aspect ratio of ten it is difficult to reduce the gate length below 0.25 µm.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1985.21902</doi><tpages>7</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Capacitance Contact resistance Electronics Exact sciences and technology Gallium arsenide HEMTs Logic gates MODFETs Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | A high aspect ratio design approach to millimeter-wave HEMT structures |
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