Planar avalanche photodiode with a low-doped, reduced curvature junction

A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1987-04, Vol.50 (17), p.1158-1160
Hauptverfasser: CHI, G. C, MUEHLNER, D. J, OSTERMAYER, F. W. JR, FREUND, J. M, PAWELEK, R, MCCOY, R. J, ETICOLAS, L. J, MATTERA, V. D. JR
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1160
container_issue 17
container_start_page 1158
container_title Applied physics letters
container_volume 50
creator CHI, G. C
MUEHLNER, D. J
OSTERMAYER, F. W. JR
FREUND, J. M
PAWELEK, R
MCCOY, R. J
ETICOLAS, L. J
MATTERA, V. D. JR
description A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−-InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.
doi_str_mv 10.1063/1.97948
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24621285</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24621285</sourcerecordid><originalsourceid>FETCH-LOGICAL-c283t-3ab55dfa9bdba6273e48b2d1fc424c876f7b7517782aadf0cb70e02342324fed3</originalsourceid><addsrcrecordid>eNo9kE1Lw0AURQdRsFbxL8xCdGPqfCWTLKWoFQq60PXwMvOGpqSdOJO0-O-Ntrh698HhcjmEXHM246yQD3xW6UqVJ2TCmdaZ5Lw8JRPGmMyKKufn5CKl9fjmQsoJWby3sIVIYQdjsCuk3Sr0wTXBId03_YoCbcM-c6FDd08jusGio3aIO-iHiHQ9bG3fhO0lOfPQJrw63in5fH76mC-y5dvL6_xxmVlRyj6TUOe581DVroZCaImqrIXj3iqhbKkLr2udc61LAeA8s7VmyIRUQgrl0ckpuT30djF8DZh6s2mSxXZcj2FIRqhCcFHmI3h3AG0MKUX0povNBuK34cz8mjLc_JkayZtjJSQLrY-jiCb941pJzoSQP6k5Z5o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24621285</pqid></control><display><type>article</type><title>Planar avalanche photodiode with a low-doped, reduced curvature junction</title><source>AIP Digital Archive</source><creator>CHI, G. C ; MUEHLNER, D. J ; OSTERMAYER, F. W. JR ; FREUND, J. M ; PAWELEK, R ; MCCOY, R. J ; ETICOLAS, L. J ; MATTERA, V. D. JR</creator><creatorcontrib>CHI, G. C ; MUEHLNER, D. J ; OSTERMAYER, F. W. JR ; FREUND, J. M ; PAWELEK, R ; MCCOY, R. J ; ETICOLAS, L. J ; MATTERA, V. D. JR</creatorcontrib><description>A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−-InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.97948</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Applied physics letters, 1987-04, Vol.50 (17), p.1158-1160</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c283t-3ab55dfa9bdba6273e48b2d1fc424c876f7b7517782aadf0cb70e02342324fed3</citedby><cites>FETCH-LOGICAL-c283t-3ab55dfa9bdba6273e48b2d1fc424c876f7b7517782aadf0cb70e02342324fed3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7431022$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHI, G. C</creatorcontrib><creatorcontrib>MUEHLNER, D. J</creatorcontrib><creatorcontrib>OSTERMAYER, F. W. JR</creatorcontrib><creatorcontrib>FREUND, J. M</creatorcontrib><creatorcontrib>PAWELEK, R</creatorcontrib><creatorcontrib>MCCOY, R. J</creatorcontrib><creatorcontrib>ETICOLAS, L. J</creatorcontrib><creatorcontrib>MATTERA, V. D. JR</creatorcontrib><title>Planar avalanche photodiode with a low-doped, reduced curvature junction</title><title>Applied physics letters</title><description>A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−-InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AURQdRsFbxL8xCdGPqfCWTLKWoFQq60PXwMvOGpqSdOJO0-O-Ntrh698HhcjmEXHM246yQD3xW6UqVJ2TCmdaZ5Lw8JRPGmMyKKufn5CKl9fjmQsoJWby3sIVIYQdjsCuk3Sr0wTXBId03_YoCbcM-c6FDd08jusGio3aIO-iHiHQ9bG3fhO0lOfPQJrw63in5fH76mC-y5dvL6_xxmVlRyj6TUOe581DVroZCaImqrIXj3iqhbKkLr2udc61LAeA8s7VmyIRUQgrl0ckpuT30djF8DZh6s2mSxXZcj2FIRqhCcFHmI3h3AG0MKUX0povNBuK34cz8mjLc_JkayZtjJSQLrY-jiCb941pJzoSQP6k5Z5o</recordid><startdate>19870427</startdate><enddate>19870427</enddate><creator>CHI, G. C</creator><creator>MUEHLNER, D. J</creator><creator>OSTERMAYER, F. W. JR</creator><creator>FREUND, J. M</creator><creator>PAWELEK, R</creator><creator>MCCOY, R. J</creator><creator>ETICOLAS, L. J</creator><creator>MATTERA, V. D. JR</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19870427</creationdate><title>Planar avalanche photodiode with a low-doped, reduced curvature junction</title><author>CHI, G. C ; MUEHLNER, D. J ; OSTERMAYER, F. W. JR ; FREUND, J. M ; PAWELEK, R ; MCCOY, R. J ; ETICOLAS, L. J ; MATTERA, V. D. JR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c283t-3ab55dfa9bdba6273e48b2d1fc424c876f7b7517782aadf0cb70e02342324fed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHI, G. C</creatorcontrib><creatorcontrib>MUEHLNER, D. J</creatorcontrib><creatorcontrib>OSTERMAYER, F. W. JR</creatorcontrib><creatorcontrib>FREUND, J. M</creatorcontrib><creatorcontrib>PAWELEK, R</creatorcontrib><creatorcontrib>MCCOY, R. J</creatorcontrib><creatorcontrib>ETICOLAS, L. J</creatorcontrib><creatorcontrib>MATTERA, V. D. JR</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHI, G. C</au><au>MUEHLNER, D. J</au><au>OSTERMAYER, F. W. JR</au><au>FREUND, J. M</au><au>PAWELEK, R</au><au>MCCOY, R. J</au><au>ETICOLAS, L. J</au><au>MATTERA, V. D. JR</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar avalanche photodiode with a low-doped, reduced curvature junction</atitle><jtitle>Applied physics letters</jtitle><date>1987-04-27</date><risdate>1987</risdate><volume>50</volume><issue>17</issue><spage>1158</spage><epage>1160</epage><pages>1158-1160</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−-InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.97948</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1987-04, Vol.50 (17), p.1158-1160
issn 0003-6951
1077-3118
language eng
recordid cdi_proquest_miscellaneous_24621285
source AIP Digital Archive
subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Planar avalanche photodiode with a low-doped, reduced curvature junction
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T20%3A05%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Planar%20avalanche%20photodiode%20with%20a%20low-doped,%20reduced%20curvature%20junction&rft.jtitle=Applied%20physics%20letters&rft.au=CHI,%20G.%20C&rft.date=1987-04-27&rft.volume=50&rft.issue=17&rft.spage=1158&rft.epage=1160&rft.pages=1158-1160&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.97948&rft_dat=%3Cproquest_cross%3E24621285%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24621285&rft_id=info:pmid/&rfr_iscdi=true