High T(c) superconducting NbN films deposited at room temperature
The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant fac...
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Veröffentlicht in: | Journal of applied physics 1985-12, Vol.58, p.4643-4648 |
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container_title | Journal of applied physics |
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creator | Thakoor, S. Lamb, J. L. Thakoor, A. P. Khanna, S. K. |
description | The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant factors governing the formation of the transition metal nitrides are the relative metal and nitrogen fluxes incident on the substrate and the background argon pressure (which dictates the overall reactive sites and residence times for nitrogen). |
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K.</creatorcontrib><title>High T(c) superconducting NbN films deposited at room temperature</title><title>Journal of applied physics</title><description>The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. 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issn | 0021-8979 |
language | eng |
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source | AIP Digital Archive; NASA Technical Reports Server |
subjects | Solid-State Physics |
title | High T(c) superconducting NbN films deposited at room temperature |
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