High-frequency constricted mesa lasers
InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small-signal 3-dB bandwidth of 20 GHz at −70 °C. Large-signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation.
Gespeichert in:
| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1985-07, Vol.47 (2), p.78-80 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 80 |
|---|---|
| container_issue | 2 |
| container_start_page | 78 |
| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 47 |
| creator | BOWERS, J. L HEMENWAY, B. R GNAUCK, A. H BRIDGES, T. J BURKHARDT, E. G WILT, D. P MAYNARD, S |
| description | InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small-signal 3-dB bandwidth of 20 GHz at −70 °C. Large-signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation. |
| doi_str_mv | 10.1063/1.96258 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_24610862</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24610862</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-e8336d8b9bccaf2c7fcc6bb442dd6a6cc652a097ee5fc47c2c626399de8543883</originalsourceid><addsrcrecordid>eNo90EtLw0AUBeBBFKxV_AtFpK5S55F5ZClFrVBwo-thcnNjR9Kkzk0X_fempri6HPg4HC5jt4IvBDfqUSwKI7U7YxPBrc2UEO6cTTjnKjOFFpfsiuh7iFoqNWHzVfzaZHXCnz22cJhB11KfIvRYzbZIYdYEwkTX7KIODeHN6U7Z58vzx3KVrd9f35ZP6wyUNX2GTilTubIoAUItwdYApizzXFaVCWYIWgZeWERdQ25BgpFGFUWFTufKOTVld2NvR330BLFH2AybWoTea-u0K-SA5iPapW6YTb3fRgJsmtBitycvcyO4M0f4MEJIHVHC2u9S3IZ08IL747O88H_PGuT9qTIQhKZOoYVI_9xp5ZTM1S_M4WcU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24610862</pqid></control><display><type>article</type><title>High-frequency constricted mesa lasers</title><source>AIP Digital Archive</source><creator>BOWERS, J. L ; HEMENWAY, B. R ; GNAUCK, A. H ; BRIDGES, T. J ; BURKHARDT, E. G ; WILT, D. P ; MAYNARD, S</creator><creatorcontrib>BOWERS, J. L ; HEMENWAY, B. R ; GNAUCK, A. H ; BRIDGES, T. J ; BURKHARDT, E. G ; WILT, D. P ; MAYNARD, S ; ATandT Bell Laboratories, Holmdel, New Jersey 07733</creatorcontrib><description>InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small-signal 3-dB bandwidth of 20 GHz at −70 °C. Large-signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96258</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>AROMATICS ; ARSENIC COMPOUNDS ; ARSENIDES ; COOLING ; DDT ; ENGINEERING ; Exact sciences and technology ; FABRICATION ; FREQUENCY RANGE ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; GALLIUM PHOSPHIDES ; GHZ RANGE ; GHZ RANGE 01-100 ; INDIUM ARSENIDES ; INDIUM COMPOUNDS ; INDIUM PHOSPHIDES ; INSECTICIDES ; LASERS ; MODULATION ; Optics ; ORGANIC CHLORINE COMPOUNDS ; ORGANIC COMPOUNDS ; ORGANIC HALOGEN COMPOUNDS ; OSCILLATIONS ; PESTICIDES ; PHOSPHIDES ; PHOSPHORUS COMPOUNDS ; Physics ; PNICTIDES ; RELAXATION ; SATURATION ; SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; TEMPERATURE EFFECTS</subject><ispartof>Appl. Phys. Lett.; (United States), 1985-07, Vol.47 (2), p.78-80</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-e8336d8b9bccaf2c7fcc6bb442dd6a6cc652a097ee5fc47c2c626399de8543883</citedby><cites>FETCH-LOGICAL-c376t-e8336d8b9bccaf2c7fcc6bb442dd6a6cc652a097ee5fc47c2c626399de8543883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8538324$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5785892$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>BOWERS, J. L</creatorcontrib><creatorcontrib>HEMENWAY, B. R</creatorcontrib><creatorcontrib>GNAUCK, A. H</creatorcontrib><creatorcontrib>BRIDGES, T. J</creatorcontrib><creatorcontrib>BURKHARDT, E. G</creatorcontrib><creatorcontrib>WILT, D. P</creatorcontrib><creatorcontrib>MAYNARD, S</creatorcontrib><creatorcontrib>ATandT Bell Laboratories, Holmdel, New Jersey 07733</creatorcontrib><title>High-frequency constricted mesa lasers</title><title>Appl. Phys. Lett.; (United States)</title><description>InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small-signal 3-dB bandwidth of 20 GHz at −70 °C. Large-signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation.</description><subject>AROMATICS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>COOLING</subject><subject>DDT</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>FREQUENCY RANGE</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>GALLIUM PHOSPHIDES</subject><subject>GHZ RANGE</subject><subject>GHZ RANGE 01-100</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INDIUM PHOSPHIDES</subject><subject>INSECTICIDES</subject><subject>LASERS</subject><subject>MODULATION</subject><subject>Optics</subject><subject>ORGANIC CHLORINE COMPOUNDS</subject><subject>ORGANIC COMPOUNDS</subject><subject>ORGANIC HALOGEN COMPOUNDS</subject><subject>OSCILLATIONS</subject><subject>PESTICIDES</subject><subject>PHOSPHIDES</subject><subject>PHOSPHORUS COMPOUNDS</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RELAXATION</subject><subject>SATURATION</subject><subject>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>TEMPERATURE EFFECTS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNo90EtLw0AUBeBBFKxV_AtFpK5S55F5ZClFrVBwo-thcnNjR9Kkzk0X_fempri6HPg4HC5jt4IvBDfqUSwKI7U7YxPBrc2UEO6cTTjnKjOFFpfsiuh7iFoqNWHzVfzaZHXCnz22cJhB11KfIvRYzbZIYdYEwkTX7KIODeHN6U7Z58vzx3KVrd9f35ZP6wyUNX2GTilTubIoAUItwdYApizzXFaVCWYIWgZeWERdQ25BgpFGFUWFTufKOTVld2NvR330BLFH2AybWoTea-u0K-SA5iPapW6YTb3fRgJsmtBitycvcyO4M0f4MEJIHVHC2u9S3IZ08IL747O88H_PGuT9qTIQhKZOoYVI_9xp5ZTM1S_M4WcU</recordid><startdate>19850715</startdate><enddate>19850715</enddate><creator>BOWERS, J. L</creator><creator>HEMENWAY, B. R</creator><creator>GNAUCK, A. H</creator><creator>BRIDGES, T. J</creator><creator>BURKHARDT, E. G</creator><creator>WILT, D. P</creator><creator>MAYNARD, S</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19850715</creationdate><title>High-frequency constricted mesa lasers</title><author>BOWERS, J. L ; HEMENWAY, B. R ; GNAUCK, A. H ; BRIDGES, T. J ; BURKHARDT, E. G ; WILT, D. P ; MAYNARD, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-e8336d8b9bccaf2c7fcc6bb442dd6a6cc652a097ee5fc47c2c626399de8543883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>AROMATICS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>COOLING</topic><topic>DDT</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>FREQUENCY RANGE</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>GALLIUM PHOSPHIDES</topic><topic>GHZ RANGE</topic><topic>GHZ RANGE 01-100</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INDIUM PHOSPHIDES</topic><topic>INSECTICIDES</topic><topic>LASERS</topic><topic>MODULATION</topic><topic>Optics</topic><topic>ORGANIC CHLORINE COMPOUNDS</topic><topic>ORGANIC COMPOUNDS</topic><topic>ORGANIC HALOGEN COMPOUNDS</topic><topic>OSCILLATIONS</topic><topic>PESTICIDES</topic><topic>PHOSPHIDES</topic><topic>PHOSPHORUS COMPOUNDS</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RELAXATION</topic><topic>SATURATION</topic><topic>SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>TEMPERATURE EFFECTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOWERS, J. L</creatorcontrib><creatorcontrib>HEMENWAY, B. R</creatorcontrib><creatorcontrib>GNAUCK, A. H</creatorcontrib><creatorcontrib>BRIDGES, T. J</creatorcontrib><creatorcontrib>BURKHARDT, E. G</creatorcontrib><creatorcontrib>WILT, D. P</creatorcontrib><creatorcontrib>MAYNARD, S</creatorcontrib><creatorcontrib>ATandT Bell Laboratories, Holmdel, New Jersey 07733</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOWERS, J. L</au><au>HEMENWAY, B. R</au><au>GNAUCK, A. H</au><au>BRIDGES, T. J</au><au>BURKHARDT, E. G</au><au>WILT, D. P</au><au>MAYNARD, S</au><aucorp>ATandT Bell Laboratories, Holmdel, New Jersey 07733</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-frequency constricted mesa lasers</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1985-07-15</date><risdate>1985</risdate><volume>47</volume><issue>2</issue><spage>78</spage><epage>80</epage><pages>78-80</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small-signal 3-dB bandwidth of 20 GHz at −70 °C. Large-signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96258</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1985-07, Vol.47 (2), p.78-80 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24610862 |
| source | AIP Digital Archive |
| subjects | AROMATICS ARSENIC COMPOUNDS ARSENIDES COOLING DDT ENGINEERING Exact sciences and technology FABRICATION FREQUENCY RANGE Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS GALLIUM PHOSPHIDES GHZ RANGE GHZ RANGE 01-100 INDIUM ARSENIDES INDIUM COMPOUNDS INDIUM PHOSPHIDES INSECTICIDES LASERS MODULATION Optics ORGANIC CHLORINE COMPOUNDS ORGANIC COMPOUNDS ORGANIC HALOGEN COMPOUNDS OSCILLATIONS PESTICIDES PHOSPHIDES PHOSPHORUS COMPOUNDS Physics PNICTIDES RELAXATION SATURATION SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes TEMPERATURE EFFECTS |
| title | High-frequency constricted mesa lasers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T07%3A49%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-frequency%20constricted%20mesa%20lasers&rft.jtitle=Appl.%20Phys.%20Lett.;%20(United%20States)&rft.au=BOWERS,%20J.%20L&rft.aucorp=ATandT%20Bell%20Laboratories,%20Holmdel,%20New%20Jersey%2007733&rft.date=1985-07-15&rft.volume=47&rft.issue=2&rft.spage=78&rft.epage=80&rft.pages=78-80&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.96258&rft_dat=%3Cproquest_osti_%3E24610862%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24610862&rft_id=info:pmid/&rfr_iscdi=true |