Etch characteristics of magnetic tunnel junction materials using H2/NH3 reactive ion beam

Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H2/NH3. By using gas mixtures of H2 and NH3, especially with the H2/NH3( 2:1) ratio, higher etch rates of MTJ related...

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Veröffentlicht in:	Nanotechnology 2020-11, Vol.32 (5), p.055301-055301
Hauptverfasser:	Kim, Ju Eun, Kim, Doo San, Gill, You Jung, Jang, Yun Jong, Kim, Ye Eun, Cho, Hanna, Won, Bok-Yeon, Kwon, Oik, Yoon, Kukhan, Choi, Jin-Young, Park, Jea-Gun, Yeom, Geun Young
Format:	Artikel
Sprache:	eng
Schlagworte:	magnetic random access memory (MRAM) magnetic tunnel junction (MTJ) reactive ion beam etching (RIBE) x-ray photoelectron spectroscopy (XPS)
Online-Zugang:	Volltext
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